20240040778. MEMORY STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
Contents
MEMORY STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
MEMORY STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240040778 titled 'MEMORY STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
Simplified Explanation
The patent application describes a semiconductor structure that includes a substrate and word line structures. The substrate has an isolation structure that defines active areas. The isolation structure consists of a trench formed in the substrate, an isolation layer filled in the trench, and a shielding layer located in the isolation layer. The word line structures are located in the substrate, pass through the isolation structure and the active areas, and are positioned above the shielding layer.
- The semiconductor structure includes a substrate and word line structures.
- An isolation structure is formed in the substrate to define active areas.
- The isolation structure consists of a trench, an isolation layer, and a shielding layer.
- The word line structures are located in the substrate and pass through the isolation structure and active areas.
- The word line structures are positioned above the shielding layer.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Integrated circuit design and fabrication
- Memory devices and storage systems
Problems solved by this technology:
- Improved isolation and protection of active areas in a semiconductor structure
- Enhanced performance and reliability of word line structures
Benefits of this technology:
- Increased efficiency and functionality of semiconductor devices
- Enhanced performance and reliability of integrated circuits
- Improved manufacturing processes and yield rates
Original Abstract Submitted
a semiconductor structure includes a substrate and word line structures. an isolation structure is formed in the substrate, and the isolation structure defines active areas in the substrate. the isolation structure includes a trench formed in the substrate, an isolation layer filled in the trench, and a shielding layer located in the isolation layer. the word line structures are located in the substrate, pass through the isolation structure and the active areas, and are located above the shielding layer.
