Taiwan semiconductor manufacturing co., ltd. (20240128178). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yu-Hung Lin of Taichung City (TW)
Wei-Ming Wang of Taichung City (TW)
Su-Chun Yang of Hsinchu County (TW)
Jih-Churng Twu of Hsinchu County (TW)
Shih-Peng Tai of Xinpu Township (TW)
Kuo-Chung Yee of Taoyuan City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128178 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a method of forming a semiconductor structure by trimming a first substrate to create a recess, forming a conductive structure, bonding the substrate to a carrier, thinning down the substrate, and then forming a dielectric material in the recess. A planarization process is performed to expose the conductive structure, and the carrier is removed.
- Trimming of first substrate to create a recess on a sidewall
- Formation of a conductive structure in the first substrate
- Bonding of the first substrate to a carrier
- Thinning down of the first substrate
- Formation of dielectric material in the recess and over the top surface
- Planarization process to expose the conductive structure
- Removal of the carrier from the first substrate
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This technology solves the problem of efficiently forming semiconductor structures with precise dimensions and properties.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, as well as cost-effective manufacturing processes.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and research institutions.
Possible Prior Art
One possible prior art could be the use of similar methods for forming semiconductor structures in the field of microelectronics.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This article does not provide a direct comparison between this method and traditional semiconductor manufacturing processes.
What are the specific materials used in the formation of the conductive structure and dielectric material?
The article does not specify the exact materials used in the formation of the conductive structure and dielectric material.
Original Abstract Submitted
a method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. a conductive structure is formed in the first substrate. the method includes bonding the first substrate to a carrier. the method includes thinning down the first substrate. the method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. the method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. in addition, the method includes removing the carrier from the first substrate.
