18532619. Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
Contents
- 1 Trench FET Device and Method of Manufacturing Trench FET Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Trench FET Device and Method of Manufacturing Trench FET Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Trench FET Device and Method of Manufacturing Trench FET Device
Organization Name
Inventor(s)
Mo huai Chang of Nuremberg (DE)
Trench FET Device and Method of Manufacturing Trench FET Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18532619 titled 'Trench FET Device and Method of Manufacturing Trench FET Device
Simplified Explanation
The trench field-effect transistor (FET) device described in the patent application includes active trenches with gate and shield electrodes, as well as termination trenches filled with dielectric material.
- Active trenches with gate and shield electrodes
- Termination trenches filled with dielectric material
- Trenches distributed along two axes
- Shield electrodes abut termination trenches at each end
Potential Applications
The technology described in the patent application could be applied in:
- Power electronics
- Renewable energy systems
- Electric vehicles
Problems Solved
This technology helps to:
- Improve power efficiency
- Enhance switching speed
- Reduce heat generation
Benefits
The benefits of this technology include:
- Higher performance
- Increased reliability
- Lower power consumption
Potential Commercial Applications
This technology could be utilized in:
- Semiconductor manufacturing
- Power supply systems
- Electric motor control
Possible Prior Art
One possible prior art for this technology could be the use of trench FET devices in power electronics applications.
Unanswered Questions
How does this technology compare to traditional FET devices in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and traditional FET devices. Further research or testing may be needed to determine the specific advantages of this innovation.
What are the potential challenges in scaling up the production of trench FET devices for commercial use?
The article does not address the scalability of production for this technology. Understanding the challenges and limitations in mass production could be crucial for its successful commercialization.
Original Abstract Submitted
A trench field-effect transistor (FET) device includes a plurality of active trenches extending along a first axis and distributed along a second axis perpendicular to the first axis. Each active trench includes a gate electrode and a shield electrode. The trench FET device further includes a plurality of termination trenches fully filled with a dielectric material, extending along the second axis, and arranged adjacent to the active trenches. In addition, the shield electrode of each of the active trenches abuts a respective one of the plurality of termination trenches at each end.
