US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract

Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Zhe-Hao Zhang of Hsinchu (TW)

Tung-Wen Cheng of New Taipei City (TW)

Che-Cheng Chang of New Taipei City (TW)

Yung-Jung Chang of Cyonglin Township (TW)

Chang-Yin Chen of Taipei City (TW)

Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 18338759 titled 'Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same

Simplified Explanation

- The patent application describes a new structure and method for creating a fin field effect transistor (FinFET) device. - The FinFET structure includes a substrate and an isolation structure on top of the substrate. - A fin structure extends above the substrate and is embedded within the isolation structure. - An epitaxial structure is formed on top of the fin structure, and it has a pentagon-like shape. - The interface between the epitaxial structure and the fin structure is lower than the top surface of the isolation structure.

Original Abstract Submitted

A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and an isolation structure formed on the substrate. The FinFET structure also includes a fin structure extending above the substrate, and the fin structure is embedded in the isolation structure. The FinFET structure further includes an epitaxial structure formed on the fin structure, the epitaxial structure has a pentagon-like shape, and an interface between the epitaxial structure and the fin structure is lower than a top surface of the isolation structure.