Taiwan semiconductor manufacturing co., ltd. (20240128126). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE simplified abstract
Contents
- 1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chen-Huang Huang of Hsinchu (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
Shiang-Bau Wang of Pingzchen City (TW)
Shu-Yuan Ku of Zhubei City (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128126 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE
Simplified Explanation
The patent application describes a method for creating air spacers in a semiconductor device by cutting a conductive gate into two parts, applying dielectric material to the sidewalls, removing spacers, and capping voids with dielectric material.
- A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate.
- Oxide is removed from the sidewalls of the first conductive gate, and dielectric material is applied to the sidewalls.
- Spacers adjacent to the conductive gate are removed to form voids, which are then capped with dielectric material to form air spacers.
Potential Applications
The technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors or memory chips.
Problems Solved
This innovation helps in reducing parasitic capacitance and improving the overall performance and efficiency of semiconductor devices.
Benefits
The use of air spacers can enhance the electrical characteristics of the semiconductor device, leading to faster operation and lower power consumption.
Potential Commercial Applications
The technology could find applications in the production of smartphones, computers, servers, and other electronic devices requiring high-speed and energy-efficient semiconductor components.
Possible Prior Art
One possible prior art could be the use of traditional spacers in semiconductor devices to control the channel width and improve device performance.
Unanswered Questions
How does this technology compare to existing methods of creating spacers in semiconductor devices?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages or disadvantages of this new approach.
What are the specific performance improvements achieved by using air spacers in semiconductor devices?
The article does not delve into the quantitative or qualitative enhancements in device performance resulting from the implementation of air spacers, leaving this aspect open for further exploration.
Original Abstract Submitted
a conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. an oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.
