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Category:H01L21/02
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Pages in category "H01L21/02"
The following 200 pages are in this category, out of 487 total.
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- 18511711. EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513028. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CHANNEL STRUCTURES USING SELECTIVE BOTTOM-UP APPROACH simplified abstract (Intel Corporation)
- 18513297. SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18513404. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513942. ROUGH BUFFER LAYER FOR GROUP III-V DEVICES ON SILICON simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18514859. SPACE FILLING DEVICE FOR WET BENCH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
- 18515842. Semiconductor Device, Method and Machine of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18515908. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516106. GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516408. Fin Loss Prevention simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516410. FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516431. CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18517194. SEMICONDUCTOR WAFER CLEANING APPARATUS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518459. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519516. SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519519. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (TOKYO ELECTRON LIMITED)
- 18519805. SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521253. SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18521404. METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18521931. METAL SOURCE/DRAIN FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522056. SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION simplified abstract (Intel Corporation)
- 18522064. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522461. METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524767. FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING simplified abstract (TOKYO ELECTRON LIMITED)
- 18525473. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18525988. HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526445. SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526472. SUBSTRATE PROCESSING APPARATUS, PROCESSING METHOD, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18526588. TREATMENT LIQUID, CLEANING METHOD OF SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT simplified abstract (FUJIFILM CORPORATION)
- 18526839. Multi-Gate Device And Related Methods simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18527663. ADDITIVE PROCESS FOR CIRCULAR PRINTING simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18529024. SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18532505. LAMINATE AND METHOD OF MANUFACTURING LAMINATE simplified abstract (Japan Display Inc.)
- 18539700. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
2
- 20240021678. PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS simplified abstract (MACOM Technology Solutions Holdings, Inc.)
- 20240038527. FORMING FILMS WITH IMPROVED FILM QUALITY simplified abstract (Applied Materials, Inc.)
- 20240038863. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240039486. COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER simplified abstract (Fujitsu Limited)
- 20240055487. SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD simplified abstract (National Central University)
- 20240082881.SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD simplified abstract (samsung electronics co., ltd.)
- 20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)
B
- Blockchain patent applications on 22nd Mar 2024
- Blockchain patent applications on April 11th, 2024
- Blockchain patent applications on April 18th, 2024
- Blockchain patent applications on April 25th, 2024
- Blockchain patent applications on April 4th, 2024
- Blockchain patent applications on February 15th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 22nd, 2024
- Blockchain patent applications on February 29th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 21st, 2024
- Blockchain patent applications on March 28th, 2024
I
- Intel corporation (20240105419). ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS simplified abstract
- Intel corporation (20240105453). HIGH ASPECT RATIO METAL GATE CUTS simplified abstract
- Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract
- Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract
- Intel corporation (20240112971). SINGULATION OF INTEGRATED CIRCUIT PACKAGE SUBSTRATES WITH GLASS CORES simplified abstract
- Intel corporation (20240113039). BACKSIDE WAFER TREATMENTS TO REDUCE DISTORTIONS AND OVERLAY ERRORS DURING WAFER CHUCKING simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel corporation (20240113128). HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
- Intel corporation (20240120415). TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract
- Intel corporation (20240128269). VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on April 4th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 18th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240096793). NON-PLANAR METAL-INSULATOR-METAL STRUCTURE simplified abstract
- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- International Business Machines Corporation patent applications on January 18th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
K
- Kabushiki kaisha toshiba (20240096969). NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- Kioxia corporation (20240099009). METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
R
S
- Samsung display co., ltd. (20240112911). LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD simplified abstract
- Samsung display co., ltd. (20240118221). LASER CRYSTALLIZATION MONITORING DEVICE AND METHOD OF LASER CRYSTALLIZATION MONITORING USING THE SAME simplified abstract
- Samsung Display Co., Ltd. patent applications on April 11th, 2024
- Samsung Display Co., LTD. patent applications on April 4th, 2024
- Samsung Display Co., LTD. patent applications on February 29th, 2024
- Samsung electronics co., ltd. (20240096894). SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240102160). METHOD OF DEPOSITING ATOMIC LAYER simplified abstract
- Samsung electronics co., ltd. (20240105425). SUBSTRATE PROCESSING APPARATUS AND METHOD OF PROCESSING SUBSTRATE BY USING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105470). SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105776). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240105842). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240113211). SEMICONDUCTOR DEVICE INCLUDING TWO DIMENSIONAL MATERIAL simplified abstract
- Samsung electronics co., ltd. (20240120194). WAFER PROCESSING SYSTEM simplified abstract
- Samsung electronics co., ltd. (20240120196). SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20240120403). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240128321). SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. patent applications on February 8th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240093357). Semiconductor Device, Method and Machine of Manufacture simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096646). CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096805). SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096880). WORK FUNCTION DESIGN TO INCREASE DENSITY OF NANOSHEET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096884). METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096976). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096979). SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097001). METAL SOURCE/DRAIN FEATURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097009). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105462). FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105515). TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105519). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105779). INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105813). Tuning Threshold Voltage in Field-Effect Transistors simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105814). INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240107776). ANTIFERROELECTRIC NON-VOLATILE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112905). Semiconductor Device and Method simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112928). TRIMMING METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112959). Multi-Gate Device And Related Methods simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113119). HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113173). SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136174). INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136191). FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136222). Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136226). SEMICONDUCTOR DEVICE PRE-CLEANING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136227). Barrier-Free Approach for Forming Contact Plugs simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136291). LOW-STRESS PASSIVATION LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136427). SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136438). INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136441). SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Texas instruments incorporated (20240109247). ADDITIVE PROCESS FOR CIRCULAR PRINTING simplified abstract
- Texas instruments incorporated (20240113095). STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE simplified abstract
- TEXAS INSTRUMENTS INCORPORATED patent applications on April 4th, 2024
- Texas Instruments Incorporated patent applications on February 29th, 2024
- TOYOTA JIDOSHA KABUSHIKI KAISHA patent applications on February 15th, 2024
U
- US Patent Application 17746450. FORMATION METHOD OF SHALLOW TRENCH ISOLATION simplified abstract
- US Patent Application 17751976. DIELECTRIC SILICON NITRIDE BARRIER DEPOSITION PROCESS FOR IMPROVED METAL LEAKAGE AND ADHESION simplified abstract
- US Patent Application 17752211. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF simplified abstract
- US Patent Application 17804447. SEMICONDUCTOR DEVICE PRE-CLEANING simplified abstract
- US Patent Application 17804751. GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 17824249. SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 17824669. SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE TO REDUCE CURRENT LEAKAGE simplified abstract
- US Patent Application 17825411. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE BARRIER AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 17826604. SEMICONDUCTOR DEVICE STRUCTURE WITH AIR GAP AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 17827356. HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES simplified abstract
- US Patent Application 17827652. LOW TEMPERATURE SILICON OXIDE GAP FILL simplified abstract
- US Patent Application 17829132. PLANARIZATION PROCESS, APPARATUS AND METHOD OF MANUFACTURING AN ARTICLE simplified abstract
- US Patent Application 17829243. INVERTED TRAPEZOIDAL HEAT DISSIPATING SOLDER STRUCTURE AND METHOD OF MAKING THE SAME simplified abstract
- US Patent Application 17829288. SITU CLEAN FOR BEVEL AND EDGE RING simplified abstract
- US Patent Application 17871455. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract
- US Patent Application 17871505. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract