SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. patent applications on February 8th, 2024
Patent Applications by SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. on February 8th, 2024
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.: 36 patent applications
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. has applied for patents in the areas of H10K59/122 (10), H10K59/124 (8), G09G3/3233 (6), H10K59/80 (6), G02F1/1368 (6)
With keywords such as: layer, display, electrode, panel, transistor, pixel, film, device, substrate, and region in patent application abstracts.
Patent Applications by SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
Inventor(s): Miao Zhou of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): C09K11/58, C09K11/02
Abstract: the present application relates to a quantum dot, a preparation method thereof, and a quantum dot film. the quantum dot of the present invention includes a quantum dot core and a metal shell, and a hollow ring is formed between an inner wall of the metal shell and an outer wall of the quantum dot core. the present invention prevents the use of a transition shell such as sio2 in the prior art to ensure a spacing between the quantum dot core and the metal shell; prevents the ligand modification of quantum dots, thereby preventing reduction of fluorescence efficiency of the quantum dot, thus maintaining an original light conversion efficiency of the quantum dot.
Inventor(s): Wei Dou of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G01R19/165, G09G3/3233
Abstract: a threshold voltage detection method is provided by the present application. a driving current flowing through the driving transistor during a detection process can be constant by a new detection time sequence. a voltage of the drain electrode of the driving transistor is raised to a preset voltage within a detection time by iterating for multiple iterations by an iterative method, to acquire a target threshold voltage.
Inventor(s): jinyang Zhao of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G02B30/52
Abstract: the present application provides a 3d display device. the 3d display device comprises a plurality of light-emitting fibers and a plurality of electrode wires. a plurality of light-emitting fibers are arranged at intervals and arranged in different planes. a plurality of electrode wires are arranged at intervals and arranged across and in contact with the corresponding light-emitting fibers to form a 3d network structure.
Inventor(s): Chengxiao Sun of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Miao Zhou of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G02F1/1335
Abstract: a viewing angle diffusion film and a display device are provided. the viewing angle diffusion film includes a substrate, a plurality of prism structures disposed on a surface of the substrate, and a dielectric layer filled between two adjacent prism structures. each of the prism structures includes a first side surface and a second side surface, and a distance from the first side surface to the second side surface of each of the prism structures gradually decreases in a direction away from the surface of the substrate. it prevents light from diffusing in unnecessary directions, and a utilization rate of light is increased.
Inventor(s): Yanchen LI of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G02F1/1335, G02F1/13357
Abstract: a light-emitting substrate and a display device are provided. the light-emitting substrate includes a plurality of partitions, and the partitions include a first light-emitting unit and a first dummy unit. the first light-emitting unit includes at least one light-emitting element. the first dummy unit is connected in parallel with the first light-emitting unit. the first dummy unit includes a dummy light-emitting element, and an operating voltage of the first dummy unit is greater than an operating voltage of the first light-emitting unit.
Inventor(s): Chengxiao Sun of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Miao Zhou of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Lixuan Chen of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Zhenxia Chen of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Song Lan of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G02F1/1335
Abstract: the present application provides a display device. the display device comprises a quantum dot composite film, a liquid crystal display panel and a backlight module. the quantum dot composite film comprises a quantum dot film layer, and a light emerging surface of the quantum dot film layer is provided with a plurality of first prism structures. the first prism structure is employed to reduce an angle at which light emerges from the quantum dot film layer, thereby improving the front view brightness of the display device, and improving or avoiding the problem of light leakage of the display device in the large viewing angle of the dark state.
Inventor(s): Sanhong LIU of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G02F1/1368, G02F1/1362
Abstract: a pixel, an array substrate, and a display device are provided. the pixel includes a first driving transistor, a first storage capacitor, a second driving transistor, a second storage capacitor, and a common transistor. gates of the first driving transistor and the second driving transistor are connected to a scan line. one of a source and a drain of the first driving transistor and the second driving transistor are connected to a data line. another one of the source and the drain of the first driving transistor is connected to a first common electrode line through the first storage capacitor. another one of the source and the drain of the second driving transistor is connected to a second common electrode line through the second storage capacitor. a source and a drain of the common transistor are respectively connected to the first common electrode line and the second common electrode line.
Inventor(s): Xueqiang ZHANG of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G06F3/041
Abstract: the present application provides a touch module and a touch display apparatus. the touch module includes a touch region, where a first electrode layer is arranged in the touch region. the first electrode layer includes: first touch electrodes located in the touch region, where the first touch electrodes are arranged in a first direction; and first traces each connected to the first touch electrode, where the first trace is arranged on a middle portion of the first touch electrode and extends in a second direction from the inside of the touch region toward the outside of the touch region, and the first direction and the second direction intersect.
Inventor(s): Siyang Liu of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Zui Wang of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G06F30/392
Abstract: the present application provides a method and a device for designing a gate driving circuit, a controller, and a storage medium. the method includes: acquiring size information of a target panel and determining location information of a target area according to the size information of the target panel; calling and combining size information of a standard panel, characteristic label information of a plurality of standard devices, and an architecture type identifier acquired to determine characteristic label information of at least one target device, in order to generate a target gate driving circuit in the target area.
Inventor(s): Xiaobo Yang of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09F9/302, G09F9/35
Abstract: a backplane, a display, and a display module are provided. the backplane includes a guide slot and a connecting element. the connecting element is disposed on the guide slot, and the connecting element matches the guide slot in shape. the connecting element is configured to connect the backplane with another backplane. the display and the display module include the above-mentioned backplane.
[[20240046837.BRIGHTNESS COMPENSATION METHOD of CORRECTING BRIGHTNESS ACCORDING TO REGIONAL VIEWING ANGLE, AND DEVICE OF DISPLAY PANEL, READABLE STORAGE MEDIUM, AND DISPLAY DEVICE_simplified_abstract_(shenzhen china star optoelectronics semiconductor display technology co., ltd.)]]
Inventor(s): Ling Xu of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Xinhong Chen of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/20
Abstract: a brightness compensation method and device of a display panel, a readable storage medium, and a display device are provided. a display panel is divided into at least one region. the region includes a to-be-corrected region. wherein, the brightness compensation method includes: using a photographing component to photograph the display panel displaying a preset grayscale image; obtaining an image of the to-be-corrected region under a preset grayscale; obtaining brightness data of the to-be-corrected region, wherein the regional viewing angle is an included angle between a connection line of an optical center of a lens of the photographing component connecting to a center of the at least one region, and a normal of the display panel; correcting brightness of the to-be-corrected region to obtain corrected brightness data of the to-be-corrected region; and performing brightness compensation on the display panel according to the corrected brightness data of the to-be-corrected region.
Inventor(s): Tuo Feng of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Xianjin Ge of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/20
Abstract: disclosed are a goa circuit and a display panel. the gate driver on array circuit comprises a plurality of goa units, which is cascaded, and a nth stage goa unit comprises: a pull-down module, pulling down a pull-up control signal and a nth stage gate drive signal to a low potential when the scanning is completed; and a pull-down maintaining module, maintaining the pull-up control signal and the nth stage gate drive signal at the low potential according to a nth stage non-inverting clock signal and a nth inverting clock signal.
Inventor(s): Chao Dai of Wuhan, Hubei (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Bo Li of Wuhan, Hubei (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/3233, G09G3/3266
Abstract: an embodiment of the present application discloses a display panel. a pixel circuit includes a driving transistor, a data writing transistor, a storage capacitor, and a first restoring transistor. a gate electrode of the first restoring transistor is electrically connected to a second scanning line, a source electrode of the first restoring transistor is electrically connected to a first node, and a drain electrode of the first restoring transistor is electrically connected to a first restoring signal source, wherein the first restoring transistor is an oxide transistor, and the driving transistor and the data writing transistor are polysilicon transistors.
Inventor(s): Bo Sun of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/3233, G09G3/34
Abstract: the present disclosure discloses a light-emitting driving circuit, a backlight module, and a display panel. the light-emitting driving circuit includes a drive transistor, a data writing module, and a light-emitting module. in the light-emitting module, the first terminal and the second terminal of the first light-emitting device and the first terminal and the second terminal of the second light-emitting device are arranged in reverse directions. the first power signal and the second power signal are configured to perform level conversion according to a preset period, so that the direction of the current flowing through the drive transistor is changed according to the preset period.
Inventor(s): Zhiyi Chen of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Zhenling Wang of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/3258, G09G3/3275, G09G3/3266
Abstract: a driving circuit, a display panel, and a display device are disclosed. in the driving circuit, the display panel, and the display device disclosed in the present disclosure, the gamma module outputs the first initialization voltage and the second initialization voltage when the display panel is in the internal compensation mode, and the gamma module outputs the third initialization voltage and the reference voltage when the display panel is in the detection mode.
Inventor(s): Mingyao CHEN of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Jinao CHEN of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/3258, G09G3/20
Abstract: a pixel compensation method, a pixel compensation structure, and a display panel are provided, which includes obtaining optical sensing data of the pixel unit to be compensated, determining first compensation data of the first subpixel according to the optical sensing data, and determining the second compensation data of the second subpixel according to the first compensation data. the hardware design complexity of the application and the complexity of the pixel driver program is reduced, and the purpose of fast compensation and storage space saving is achieved.
Inventor(s): Yanxue Wang of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/36
Abstract: the present disclosure provides a method for determining a pixel voltage, an electronic device, and a storage medium. the method includes: obtaining an initial color shift ratio of a sub pixel to be tested, obtaining an initial evaluation value of a preset grayscale value, and obtaining a current evaluation value of the preset grayscale value according to a current color shift ratio; comparing the initial evaluation value with the current evaluation value; and determining a standard sub pixel voltage of the sub pixel to be test according to the current color shift ratio, when the current evaluation value is greater than the initial evaluation value.
Inventor(s): Ruifa TAN of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Tianhong WANG of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Xiaohui YAO of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): G09G3/36, H01L27/12, G02F1/1343, G02F1/13, G02F1/1362
Abstract: a pixel structure and a display panel are provided. the pixel structure includes a first pixel electrode, a first longitudinal signal line, and a second longitudinal signal line. the first pixel electrode includes a first main pixel area and a first sub-pixel area. the first longitudinal signal line includes a first main line and a first secondary-line. the second longitudinal signal line includes a second main line and a second secondary-line. the first main line and the second main line are arranged in the first main pixel area, and the first secondary-line and the second secondary-line are arranged in the first sub-pixel area.
Inventor(s): Xiaofang Tan of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Zhiwei Song of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H01L27/12, G02F1/1368, G02F1/1362
Abstract: an embodiment of the present application describes a base plate and a display panel, where a thin film transistor has a gate electrode, an active layer, and a source-drain metal layer. the active layer is arranged in a different layer from the gate electrode, and the active layer is disposed to overlap the gate electrode. the barrier layer at least covers the active layer and the gate electrode, and the barrier layer is used to block water and oxygen. the flat layer covers the barrier layer; and the source-drain metal layer is arranged on the flat layer. the source-drain metal layer has a source electrode and a drain electrode, and the source electrode and the drain electrode are respectively connected to the active layer.
Inventor(s): Ruifa TAN of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Tianhong WANG of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Xiaohui YAO of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H01L27/12, G02F1/1368, G02F1/1343
Abstract: the present application discloses an array substrate and a display panel. the array substrate includes a plurality of pixel units arranged in an array, each of the pixel units includes a thin film transistor. the thin film transistor includes a gate electrode and a drain electrode. a first overlap region and a non-overlap region is defined between the gate electrode and the drain electrode. the first overlap region is adjacent to the non-overlap region. a width of a cross section of the drain electrode in the first overlap region is less than a width of a cross section of the drain electrode in the non-overlap region. the array substrate can reduce a parasitic capacitor between the gate electrode and drain electrode.
Inventor(s): Yuanpeng Chen of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Yuanjun Hsu of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H01L29/417, H01L29/786, H01L29/66
Abstract: the present application provides a thin film transistor and a manufacturing method thereof. a substrate, an active layer, a first insulating layer, and a gate electrode are stacked and disposed in sequence, the second insulating layer is disposed on the substrate and covers the active layer, the first insulating layer, and the gate electrode. a source electrode and a drain electrode are separately disposed on a side of the second insulating layer away from the gate electrode, and any one of a projection of the source electrode on the active layer or a projection of the drain electrode on the active layer does not coincide with a projection of the gate electrode on the active layer. thereby, a parasitic capacitance of the gate electrode and the source electrode can be reduced, and a parasitic capacitance of the gate electrode and the drain electrode can be reduced.
Inventor(s): Lixuan Chen of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H01L33/50, H01L27/15, H01L21/02
Abstract: the present application provides a color film substrate, a method for preparing the color film substrate, and a display panel; wherein the color film substrate comprises a substrate, a light shielding layer and a plurality of pixel units arranged on the substrate, a plurality of openings are formed on the light shielding layer, and a condensing component is arranged at bottoms of parts of the openings, wherein the condensing component is used for converging emitted light of the first color sub-pixel unit and the second color sub-pixel unit, so as to change an emission angle of the emitted light to alleviate a problem of a poor light extraction efficiency of existing qdcf structures under a front viewing angle.
Inventor(s): Wenjie LI of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/122, H10K59/12, H10K59/80
Abstract: a display panel, a method for manufacturing the same, and a display device are provided. the display panel includes a plurality of anode electrodes, a first pixel definition layer provided with a plurality of first pixel openings, and a second pixel definition layer. at least two of the anode electrodes are disposed in one of the first pixel openings. each of the first pixel openings has at least two light-emitting pixels with a same light-emitting color, and each of the light-emitting pixels corresponds to one of the anode electrodes. the second pixel definition layer is disposed at least between two adjacent anode electrodes in each of the first pixel openings. a height of the first pixel definition layer is greater than a height of the second pixel definition layer.
Inventor(s): Xiang Xiao of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/124
Abstract: embodiments of the present application discloses a display panel. a thin-film transistor layer includes a first stacking structure and a second stacking structure. the first stacking structure and the second stacking structure are provided corresponding to a same opening. the first stacking structure includes conductive layers and insulating layers. the second stacking structure includes a compensation layer and insulating layers. a number of the conductive layers of the first stacking structure is greater than a number of the conductive layers of the second stacking structure. the compensation layer is used to increase a height of the second stacking structure. the planarization layer covers the thin-film transistor layer.
Inventor(s): Kaikai Li of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Jia Tang of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/124, H10K59/121, H10K59/131, H10K59/122, H10K59/126
Abstract: an organic light-emitting diode (oled) display panel and a display device are provided. the oled display panel includes a substrate, a thin-film transistor device layer, a light-emitting device, a passivation layer, a planarization layer, a level-raised layer, a protruding platform, an auxiliary electrode, and an undercut channel. the protruding platform is disposed directly above the level-raised layer. the auxiliary electrode includes a contact portion and a step portion, and the step portion is located at a vertical level higher than a vertical level of the contact portion. an orthographic projection of the undercut channel on the substrate and an orthographic projection of the level-raised layer on the substrate are spaced apart from each other.
Inventor(s): Weiran Cao of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Gaobo Lin of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Yuanjun Hsu of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/124
Abstract: a flexible display panel and a flexible array substrate are provided, which include a flexible substrate, a thin film transistor layer, and an organic planarization layer. the thin film transistor layer is disposed on the flexible substrate and in a display area and includes a plurality of insulating layers disposed in a stack, wherein, a surface of the thin film transistor layer away from the flexible substrate is provided with first through-holes penetrating at least one of the insulating layers. the organic planarization layer covers one side of the thin film transistor layer away from the flexible substrate and is filled in the first through-holes.
Inventor(s): Jingyuan Hu of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Gaobo Lin of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/80, H10K59/124, H10K59/12
Abstract: an organic light-emitting diode (oled) display panel and a manufacturing method thereof are provided. the oled display panel includes a substrate, a thin film transistor device, an auxiliary electrode, a passivation layer, a planarization layer, and a light-emitting device layer. the light-emitting device layer includes an anode layer, a light-emitting functional layer, and a cathode layer. wherein, a first via hole penetrating the planarization layer and the passivation layer is defined above the auxiliary electrode, and a notch between the auxiliary electrode and the planarization layer is defined at a bottom of an inner sidewall of the first via, and the cathode layer extends through the first via hole to the notch to connect with the auxiliary electrode.
Inventor(s): Zongpeng Yang of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/80, H10K59/122, H10K59/12
Abstract: a display panel and a method of manufacturing the same are provided. in the display panel, a second inorganic film is additionally provided and disposed between the first inorganic film and the organic film, and a gap is formed between the second inorganic film and the bank, so that the surface roughness between the organic film and each of the first inorganic film and the second inorganic film is increased, and binding forces between the adjacent films are increased to prevent the display panel from encountering a film peeling phenomenon in a curling or bending process and increase the yield.
Inventor(s): Wendong LIAN of Shenzhen (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/80
Abstract: the present application discloses an oled display panel and an electronic device. the oled display panel includes a display main body and an encapsulation structure, wherein the display main body has a display area and a non-display area defined at a periphery of the display area; and an encapsulation structure disposed at one side of the display main body, wherein the encapsulation structure extends from the display area to the non-display area, the encapsulation structure includes a first organic layer, a first inorganic layer, and a second organic layer that are sequentially stacked, and the second organic layer covers a side surface of the first organic layer.
Inventor(s): Weiran Cao of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Jinchuan Li of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Ying Liu of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd., Wendong Lian of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/80
Abstract: an oled display panel and an electronic device are disclosed. the oled display panel comprises a main display part and a first organic packaging layer, and the main display part has a display area and a non-display area disposed around the display area; and the first organic packaging layer is disposed on the main display part, wherein the first organic packaging layer comprises a first organic packaging section, the first organic packaging section is located in the non-display area, and the first organic packaging section comprises water absorbent.
Inventor(s): Lixuan CHEN of Shenzhen, Guangdong (CN) for shenzhen china star optoelectronics semiconductor display technology co., ltd.
IPC Code(s): H10K59/80, H10K59/35
Abstract: the present application provides a display panel and a mobile terminal, which can mix the same color light emitted by one of a plurality of light-emitting devices and another one of the plurality of light-emitting devices, thereby simultaneously improving light extraction efficiency and viewing angle characteristics of the display panel.
- SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- C09K11/58
- C09K11/02
- Shenzhen china star optoelectronics semiconductor display technology co., ltd.
- G01R19/165
- G09G3/3233
- G02B30/52
- G02F1/1335
- G02F1/13357
- G02F1/1368
- G02F1/1362
- G06F3/041
- G06F30/392
- G09F9/302
- G09F9/35
- G09G3/20
- G09G3/3266
- G09G3/34
- G09G3/3258
- G09G3/3275
- G09G3/36
- H01L27/12
- G02F1/1343
- G02F1/13
- H01L29/417
- H01L29/786
- H01L29/66
- H01L33/50
- H01L27/15
- H01L21/02
- H10K59/122
- H10K59/12
- H10K59/80
- H10K59/124
- H10K59/121
- H10K59/131
- H10K59/126
- H10K59/35
