Taiwan semiconductor manufacturing company, ltd. (20240112905). Semiconductor Device and Method simplified abstract
Contents
- 1 Semiconductor Device and Method
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Device and Method - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Semiconductor Device and Method
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ching-Yu Chang of Taipei City (TW)
Jei Ming Chen of Tainan City (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112905 titled 'Semiconductor Device and Method
Simplified Explanation
The abstract describes a method of forming a semiconductor device by depositing a gap-filling material in an opening in a mask layer, performing a plasma treatment to reduce the height of the material, and then patterning the substrate using the material as a mask.
- Mask layer is formed over a substrate.
- Opening is created in the mask layer.
- Gap-filling material is deposited in the opening.
- Plasma treatment is performed on the gap-filling material to reduce its height.
- Mask layer is removed.
- Substrate is patterned using the reduced-height gap-filling material as a mask.
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory devices.
Problems Solved
1. Improved gap-filling in semiconductor device fabrication. 2. Enhanced patterning accuracy and precision.
Benefits
1. Increased efficiency in semiconductor device manufacturing. 2. Cost-effective fabrication process. 3. Enhanced device performance and reliability.
Potential Commercial Applications
Optimizing Semiconductor Device Fabrication Process for Enhanced Performance
Possible Prior Art
Prior art may include similar methods of gap-filling and patterning in semiconductor device fabrication processes.
Unanswered Questions
How does the plasma treatment specifically reduce the height of the gap-filling material?
The plasma treatment likely removes excess material through etching or other chemical processes, but the exact mechanism is not detailed in the abstract.
What types of substrates are compatible with this method?
The abstract does not specify the compatibility of this method with different types of substrates, which could impact its applicability in various semiconductor manufacturing processes.
Original Abstract Submitted
a method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. a gap-filling material is deposited in the opening. a plasma treatment is performed on the gap-filling material. the height of the gap-filling material is reduced. the mask layer is removed. the substrate is patterned using the gap-filling material as a mask.
