Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chun-Hsiung Tsai of Xinpu Township (TW)

Shahaji B. More of Hsinchu City (TW)

Cheng-Yi Peng of Taipei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Kuo-Feng Yu of Zhudong Township (TW)

Ziwei Fang of Hsinchu (TW)

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113221 titled 'FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Simplified Explanation

The abstract describes a fin field effect transistor (FinFET) device structure with multiple fin structures, an isolation structure, a gate structure, a source/drain structure, and a metal silicide layer.

• The FinFET device structure consists of fin structures on a substrate, an isolation structure between the fin structures, and a gate structure on top of the fin structures.
• The source/drain structure is located over the fin structure and is adjacent to the gate structure.
• A metal silicide layer is present over the source/drain structure and is in contact with the isolation structure.

Potential Applications

The FinFET device structure can be used in:

• High-performance integrated circuits
• Low-power electronics
• Advanced semiconductor devices

Problems Solved

This technology helps in:

• Improving transistor performance
• Reducing power consumption
• Enhancing device reliability

Benefits

The benefits of this technology include:

• Increased speed and efficiency of electronic devices
• Lower power consumption
• Enhanced overall device performance

Potential Commercial Applications

The potential commercial applications of this technology include:

• Semiconductor manufacturing companies
• Electronics industry
• Research and development organizations

Possible Prior Art

One example of prior art in this field is the development of traditional field-effect transistors (FETs) with planar structures. These devices have been widely used in the semiconductor industry but are facing limitations in terms of performance and power efficiency.

Unanswered Questions

How does the metal silicide layer impact the overall performance of the FinFET device structure?

The article does not provide specific details on the role of the metal silicide layer in the functionality of the device.

Are there any specific manufacturing processes involved in creating the FinFET device structure?

The article does not mention the manufacturing techniques or processes used to fabricate the FinFET device structure.

Original Abstract Submitted

a fin field effect transistor (finfet) device structure is provided. the finfet device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. the finfet device structure includes a source/drain (s/d) structure over the fin structure, and the s/d structure is adjacent to the gate structure. the finfet device structure also includes a metal silicide layer over the s/d structure, and the metal silicide layer is in contact with the isolation structure.