Taiwan semiconductor manufacturing co., ltd. (20240096976). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shih-Yen Lin of New Taipei City (TW)
Po-Cheng Tsai of Taichung City (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096976 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The method described in the abstract involves forming a gate dielectric layer, a 2-D material layer, and source/drain contacts over the 2-D material layer in a semiconductor device fabrication process.
- Gate dielectric layer is formed over a gate electrode layer.
- A 2-D material layer is deposited over the gate dielectric layer.
- Source/drain contacts are formed over source/drain regions of the 2-D material layer, with each contact consisting of an antimonene layer and a metal layer.
- A portion of the 2-D material layer exposed by the source/drain contacts is removed, leaving a channel region over the gate dielectric layer.
Potential Applications
This technology can be applied in the development of high-performance semiconductor devices, such as transistors, sensors, and other electronic components.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enhancing the contact resistance and overall conductivity of the device.
Benefits
The use of 2-D materials like antimonene can lead to better electrical properties, higher carrier mobility, and improved device reliability in semiconductor applications.
Potential Commercial Applications
The technology can find commercial applications in the semiconductor industry for manufacturing advanced electronic devices with superior performance characteristics.
Possible Prior Art
Prior art may include similar methods for forming source/drain contacts over 2-D materials in semiconductor devices, as well as techniques for improving device performance through material engineering.
Unanswered Questions
How does the thickness of the antimonene layer affect the performance of the semiconductor device?
The abstract does not provide specific details on the optimal thickness of the antimonene layer and its impact on device characteristics.
What are the specific metal layers used in the source/drain contacts and how do they influence device performance?
The abstract does not mention the types of metal layers employed in the source/drain contacts and their individual contributions to device functionality.
Original Abstract Submitted
a method includes forming a gate dielectric layer over a gate electrode layer; forming a 2-d material layer over the gate dielectric layer; forming source/drain contacts over source/drain regions of the 2-d material layer, in which each of the source/drain contacts includes an antimonene layer and a metal layer over the antimonene layer; and after forming the source/drain contacts, removing a first portion of the 2-d material layer exposed by the source/drain contacts, while leaving a second portion of the 2-d material layer remaining over the gate dielectric layer as a channel region.
