18539700. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
Yasuhiro Jinbo of Isehara (JP)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18539700 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application involves a process of forming multiple layers over a substrate to create a structure with favorable electrical characteristics. The key steps include depositing oxide and insulating films, performing microwave and heat treatments, depositing a conductive film, and removing parts of the layers to expose the top surface of the insulator.
- Formation of multiple layers over a substrate to create a semiconductor device with favorable electrical characteristics
- Deposition of oxide and insulating films, followed by microwave and heat treatments
- Deposition of a conductive film and removal of parts of the layers to expose the top surface of the insulator
Potential Applications
The technology described in the patent application could be applied in the manufacturing of various semiconductor devices, such as transistors, diodes, and integrated circuits.
Problems Solved
This technology addresses the need for semiconductor devices with improved electrical characteristics, such as enhanced conductivity and insulation properties.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, potentially leading to advancements in electronics and technology.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of high-performance electronic components.
Possible Prior Art
One possible prior art for this technology could be similar methods used in the semiconductor industry for the fabrication of devices with specific electrical properties.
Unanswered Questions
How does the microwave treatment affect the properties of the semiconductor device?
The article does not provide detailed information on how the microwave treatment influences the characteristics of the semiconductor device.
What specific materials are used in the deposition of the oxide and insulating films?
The article does not specify the exact materials utilized in the deposition process of the oxide and insulating films.
Original Abstract Submitted
A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.
