Robert bosch gmbh (20240136407). VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER simplified abstract
Contents
- 1 VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER
Organization Name
Inventor(s)
Kevin Dannecker of Reutlingen (DE)
Stefan Regensburger of Renningen (DE)
VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136407 titled 'VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER
Simplified Explanation
The abstract describes a vertical semiconductor component, such as a transistor, based on gallium nitride (GaN) with at least two, preferably three, vertically arranged electrodes. The semiconductor layer structure includes a contact semiconductor layer, an intermediate layer for compensating for lattice mismatch, and electrodes.
- The semiconductor component is based on gallium nitride (GaN).
- It has at least two, preferably three, vertically arranged electrodes.
- The semiconductor layer structure includes a contact semiconductor layer and an intermediate layer for compensating for lattice mismatch.
- The electrodes are arranged vertically one above the other.
Potential Applications
This technology could be applied in:
- Power electronics
- RF amplifiers
- LED lighting
Problems Solved
This technology solves issues related to:
- Lattice mismatch between foreign substrates and semiconductor layers
- Vertical integration of semiconductor components
Benefits
The benefits of this technology include:
- Improved performance of semiconductor components
- Enhanced efficiency in power electronics
- Higher reliability in RF amplifiers
Potential Commercial Applications
This technology could be commercially applied in:
- Semiconductor manufacturing
- Electronics industry
- Telecommunications sector
Possible Prior Art
One possible prior art could be the use of vertical semiconductor components in power electronics and RF amplifiers.
Unanswered Questions
1. What specific methods are used to compensate for lattice mismatch in the semiconductor layer structure? 2. How does the vertical arrangement of electrodes improve the performance of the semiconductor component?
Original Abstract Submitted
a vertical semiconductor component, in particular transistor, with a semiconductor layer structure for forming a semiconductor component on the basis of gallium nitride (gan) and at least two, preferably three, electrodes arranged vertically one above the other. the semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode. an intermediate layer for compensating for the lattice mismatch between a non-comprised foreign substrate and the contact semiconductor layer is arranged vertically below the contact semiconductor layer in some regions.
