18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
Contents
- 1 GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Unanswered Questions
- 1.10 Original Abstract Submitted
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE
Organization Name
Inventor(s)
Aaron D. Lilak of Beaverton OR (US)
Rishabh Mehandru of Portland OR (US)
Cory Weber of Hillsboro OR (US)
Willy Rachmady of Beaverton OR (US)
Varun Mishra of Hillsboro OR (US)
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18514995 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE
Simplified Explanation
The abstract describes gate-all-around integrated circuit structures with an insulator fin on an insulator substrate. Here are some key points from the abstract:
- Integrated circuit structure includes an insulator fin on an insulator substrate
- Vertical arrangement of horizontal semiconductor nanowires over the insulator fin
- Gate stack surrounds the channel region of the nanowires and is overlying the insulator fin
- Epitaxial source or drain structures at the ends of the nanowires and insulator fin
Potential Applications
The technology described in the patent application could have potential applications in the following areas:
- Nanoelectronics
- Semiconductor industry
- Integrated circuit design
Problems Solved
The technology addresses several issues in the field of integrated circuit design, including:
- Improving performance and efficiency of integrated circuits
- Enhancing transistor density
- Reducing power consumption
Benefits
Some of the benefits of this technology include:
- Higher integration density
- Improved transistor performance
- Lower power consumption
- Enhanced overall efficiency of integrated circuits
Potential Commercial Applications
The technology could be applied in various commercial sectors, such as:
- Consumer electronics
- Telecommunications
- Automotive industry
Unanswered Questions
How does this technology compare to existing integrated circuit structures in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing integrated circuit structures.
What are the potential challenges or limitations of implementing this technology on a large scale?
The article does not address the potential challenges or limitations of scaling up the production of integrated circuits using this technology.
Original Abstract Submitted
Gate-all-around integrated circuit structures having an insulator fin on an insulator substrate, and methods of fabricating gate-all-around integrated circuit structures having an insulator fin on an insulator substrate, are described. For example, an integrated circuit structure includes an insulator fin on an insulator substrate. A vertical arrangement of horizontal semiconductor nanowires is over the insulator fin. A gate stack surrounds a channel region of the vertical arrangement of horizontal semiconductor nanowires, and the gate stack is overlying the insulator fin. A pair of epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal semiconductor nanowires and at first and second ends of the insulator fin.
