18522461. METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Tsung-Lin Lee of Hsinchu City (TW)

Chih-Hao Chang of Chu-Bei City (TW)

Chih-Hsin Ko of Fongshan City (TW)

Feng Yuan of Yonghe City (TW)

Jeff J. Xu of Jhubei City (TW)

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED - A simplified explanation of the abstract

This abstract first appeared for US patent application 18522461 titled 'METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

Simplified Explanation

The field effect transistor described in the patent application includes a substrate with a fin structure, an isolation structure, and a source/drain recess cavity below the substrate's top surface. The strained structure in the recess cavity consists of a lower portion with a first strained layer in direct contact with the isolation structure and a dielectric layer, and an upper portion with a second strained layer overlying the first strained layer.

• Substrate with fin structure
• Isolation structure in the substrate
• Source/drain recess cavity below the substrate's top surface
• Strained structure in the recess cavity with lower and upper portions
• First strained layer in direct contact with the isolation structure and a dielectric layer
• Second strained layer overlying the first strained layer

Potential Applications

The technology described in the patent application could be applied in the development of high-performance field effect transistors for various electronic devices, such as smartphones, tablets, and computers.

Problems Solved

This technology helps improve the performance and efficiency of field effect transistors by incorporating strained structures in the source/drain recess cavity, enhancing the overall functionality of electronic devices.

Benefits

The benefits of this technology include increased speed, reduced power consumption, and improved reliability of electronic devices utilizing field effect transistors with strained structures.

Potential Commercial Applications

• High-performance electronic devices
• Semiconductor industry advancements

Possible Prior Art

One possible prior art could be the use of strained structures in field effect transistors to enhance their performance and efficiency.

Unanswered Questions

How does the strained structure impact the overall performance of the field effect transistor?

The strained structure in the source/drain recess cavity is designed to improve the transistor's performance, but the specific effects and benefits of this design are not detailed in the abstract.

What materials are used in the strained structure, and how do they contribute to the transistor's functionality?

The abstract mentions strained layers and a dielectric layer in the strained structure, but it does not specify the materials used or how they interact to enhance the transistor's performance.

Original Abstract Submitted

A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.