Taiwan semiconductor manufacturing co., ltd. (20240096979). SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wang-Chun Huang of Kaohsiung City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096979 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor structure with a fin structure protruding from a substrate, alternating semiconductor material layers, spacer layers, inter-layer dielectric layers, and gate structures.
- Formation of a fin structure with alternating semiconductor material layers and spacer layers.
- Recessing the fin structure and forming an epitaxial structure in the opening.
- Forming inter-layer dielectric layers and gate structures around the semiconductor material layers.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for use in electronics and computing.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the structure and materials used in their fabrication.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in semiconductor devices.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry, specifically in the production of advanced transistors for use in a wide range of electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar fin structures and alternating semiconductor material layers in the fabrication of semiconductor devices.
Unanswered Questions
How does this technology compare to existing methods for forming semiconductor structures?
The article does not provide a direct comparison with existing methods, so it is unclear how this technology differs or improves upon current practices.
What are the specific performance improvements achieved by this method?
The article does not detail the specific performance enhancements or metrics resulting from the use of this technology, leaving this aspect unanswered.
Original Abstract Submitted
a method for forming a semiconductor structure is provided. the method includes forming a fin structure protruding from a substrate. the fin structure includes alternately stacked first semiconductor material layers and second semiconductor material layers. the method includes forming a spacer layer over the fin structure. the method includes forming a first inter-layer dielectric (ild) layer over the spacer layer. the method also includes recessing the fin structure and the first ild layer to form a first opening through the first ild layer. the method further includes forming an epitaxial structure in the first opening, and forming a second ild layer over the epitaxial structure and the first ild layer. in addition, the method includes removing the first semiconductor material layers, and forming a gate structure around the second semiconductor material layers.
