Taiwan semiconductor manufacturing company, ltd. (20240136441). SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Yi Wu of Taichung City (TW)
SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136441 titled 'SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with a first transistor on it. The first transistor consists of a first channel layer, a magnesium oxide layer, a first gate electrode, a first gate dielectric, and first source/drain electrodes. The crystal orientation of the first channel layer is <100> or <110>, with the magnesium oxide layer located below the first channel layer and in contact with it. The first gate electrode is positioned over the first channel layer, while the first gate dielectric is located between the first channel layer and the first gate electrode. The first source/drain electrodes are placed on the first channel layer.
- The semiconductor device features a first transistor with a unique crystal orientation of <100> or <110>.
- The magnesium oxide layer plays a crucial role in the functioning of the first transistor.
- The first gate electrode and gate dielectric are strategically positioned to optimize the performance of the first transistor.
Potential Applications
The technology described in this patent application could be applied in:
- Advanced electronic devices
- High-performance computing systems
- Power management applications
Problems Solved
This technology addresses issues related to:
- Enhancing transistor performance
- Improving semiconductor device efficiency
- Optimizing power consumption in electronic devices
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Enhanced overall performance of semiconductor devices
- Reduced power consumption and improved energy efficiency
Potential Commercial Applications
Optimized Semiconductor Device Structure for Enhanced Performance: This section could explore potential commercial applications in industries such as:
- Consumer electronics
- Telecommunications
- Automotive technology
Possible Prior Art
There may be prior art related to:
- Semiconductor device structures with specific crystal orientations
- Transistor designs incorporating magnesium oxide layers
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.
What are the potential challenges or limitations of implementing this technology in practical applications?
The article does not address the potential challenges or limitations that may arise when implementing this technology in practical applications.
Original Abstract Submitted
a semiconductor device includes a substrate, and a first transistor disposed on the substrate. the first transistor includes a first channel layer, a magnesium oxide layer, a first gate electrode, a first gate dielectric and first source/drain electrodes. a crystal orientation of the first channel layer is <100> or <110>. the magnesium oxide layer is located below the first channel layer and in contact with the first channel layer. the first gate electrode is located over the first channel layer. the first gate dielectric is located in between the first channel layer and the first gate electrode. the first source/drain electrodes are disposed on the first channel layer.
