Taiwan semiconductor manufacturing co., ltd. (20240096884). METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract
Contents
- 1 METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096884 titled 'METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
Simplified Explanation
The abstract describes a method of making a semiconductor device involving the formation of a first polysilicon structure, a first spacer with a concave corner region, and a protective layer with varying thickness.
- Formation of first polysilicon structure over a portion of the substrate
- Formation of a first spacer with a concave corner region on the sidewall of the first polysilicon structure
- Formation of a protective layer covering the first spacer and the first polysilicon structure with different thicknesses
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This technology helps in improving the reliability and performance of semiconductor devices by providing enhanced protection and insulation to the components.
Benefits
The method offers increased durability and efficiency to semiconductor devices, leading to better overall performance and longevity.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the production of high-quality and reliable electronic components.
Possible Prior Art
One possible prior art could be the use of protective layers with varying thicknesses in semiconductor device manufacturing processes to enhance performance and reliability.
Unanswered Questions
How does this technology compare to existing methods in terms of cost-effectiveness?
The article does not provide information on the cost implications of implementing this technology compared to traditional methods.
What are the potential environmental impacts of using this technology in semiconductor manufacturing processes?
The article does not address the environmental considerations related to the use of this technology in semiconductor manufacturing.
Original Abstract Submitted
a method of making a semiconductor device includes forming a first polysilicon structure over a first portion of a substrate. the method further includes forming a first spacer on a sidewall of the first polysilicon structure, wherein the first spacer has a concave corner region between an upper portion and a lower portion. the method further includes forming a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, and a difference between the first thickness and the second thickness is at most 10% of the second thickness.
