Taiwan semiconductor manufacturing company, ltd. (20240136291). LOW-STRESS PASSIVATION LAYER simplified abstract

LOW-STRESS PASSIVATION LAYER

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Hsiang-Ku Shen of Hsinchu City (TW)

Chen-Chiu Huang of Taichung City (TW)

Chia-Nan Lin of Chiayi County (TW)

Man-Yun Wu of Hsinchu (TW)

Wen-Tzu Chen of Taoyuan City (TW)

Sean Yang of New Taipei City (TW)

Dian-Hao Chen of Hsinchu (TW)

Chi-Hao Chang of Taoyuan (TW)

Ching-Wei Lin of Hsinchu City (TW)

Wen-Ling Chang of Miaoli County (TW)

LOW-STRESS PASSIVATION LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240136291 titled 'LOW-STRESS PASSIVATION LAYER

Simplified Explanation

The abstract describes a method of forming semiconductor devices by patterning a redistribution layer, depositing dielectric and nitride layers, and removing portions of the nitride layer over corners of conductive features.

• The method involves receiving a workpiece with a redistribution layer electrically coupled to an interconnect structure.
• Patterning the redistribution layer to create a recess separating two conductive features.
• Depositing a dielectric layer over the conductive features and within the recess.
• Depositing a nitride layer over the dielectric layer.
• Removing portions of the nitride layer over the corners of the conductive features.

Potential Applications

This technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved

This method helps in improving the performance and reliability of semiconductor devices by enhancing the interconnect structure and reducing signal interference.

Benefits

The benefits of this technology include increased device efficiency, higher processing speeds, and improved overall device functionality.

Potential Commercial Applications

The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and telecommunications sector.

Possible Prior Art

One possible prior art could be the use of similar methods in the fabrication of semiconductor devices, such as the deposition of dielectric and nitride layers over conductive features.

How does this method compare to traditional semiconductor device fabrication techniques?

This article does not provide a direct comparison between this method and traditional techniques in terms of efficiency, cost-effectiveness, or performance improvements.

What are the specific characteristics of the nitride layer that make it suitable for this application?

The article does not delve into the specific properties or composition of the nitride layer used in this method and how they contribute to the overall functionality of the semiconductor device.

Original Abstract Submitted

semiconductor devices and methods of forming the same are provided. in some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. in some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. the method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. the method further includes depositing a nitride layer over the first dielectric layer. in some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.