Kioxia corporation (20240099009). METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Mariko Sumiya of Yokkaichi Mie (JP)
Ryosuke Yamamoto of Nagoya Aichi (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099009 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The method for manufacturing a semiconductor device involves forming a release layer with a first polycrystalline semiconductor layer and a second polycrystalline semiconductor layer on a first substrate, subjecting the first polycrystalline semiconductor layer to anodic chemical conversion to form a first porous layer, forming a first device layer on the first porous layer, and bonding the first device layer to a second device layer on a second substrate.
- Formation of a release layer with specific impurity concentrations in the polycrystalline semiconductor layers.
- Anodic chemical conversion of the first polycrystalline semiconductor layer to create a porous layer.
- Bonding of device layers from different substrates.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, sensors, and microprocessors.
Problems Solved
This method allows for the creation of semiconductor devices with improved performance and reliability by utilizing specific impurity concentrations and porous layers.
Benefits
The benefits of this technology include enhanced semiconductor device functionality, increased efficiency, and potentially reduced manufacturing costs.
Potential Commercial Applications
Commercial applications for this technology could include the production of high-performance electronic devices for various industries, including telecommunications, automotive, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of anodic oxidation in semiconductor manufacturing processes to create porous layers for device integration.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing techniques?
This article does not provide a direct comparison between this method and traditional semiconductor manufacturing processes in terms of efficiency, cost-effectiveness, or performance improvements.
What are the specific characteristics of the first and second device layers in terms of materials and functionality?
The article does not delve into the specific materials or functionalities of the first and second device layers bonded together in this manufacturing process.
Original Abstract Submitted
a method for manufacturing a semiconductor device includes: forming a release layer including a first polycrystalline semiconductor layer provided on a first substrate, and a second polycrystalline semiconductor layer provided between the first substrate and the first polycrystalline semiconductor layer and having a p-type impurity concentration which is lower than that of the first polycrystalline semiconductor layer, and an n-type impurity concentration which is higher than that of the first polycrystalline semiconductor layer; subjecting the first polycrystalline semiconductor layer to anodic chemical conversion to form a first porous layer; forming a first device layer on the first porous layer; and bonding together the first device layer and a second device layer provided on a second substrate.
