US Patent Application 17826604. SEMICONDUCTOR DEVICE STRUCTURE WITH AIR GAP AND METHOD FOR FORMING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE STRUCTURE WITH AIR GAP AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yi-Ruei Jhan of Keelung City (TW)]]

[[Category:Kuo-Cheng Chiang of Zhubei City (TW)]]

[[Category:Chih-Hao Wang of Baoshan Township (TW)]]

SEMICONDUCTOR DEVICE STRUCTURE WITH AIR GAP AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17826604 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH AIR GAP AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a method for forming a semiconductor device structure.

  • The method involves providing a substrate with a base and two fins.
  • A first nanostructure stack and a second nanostructure stack are formed over the two fins.
  • An isolation layer is then formed over the base.
  • An isolation structure with an air gap is formed between the two fins and between the two nanostructure stacks.
  • The isolation layer is partially removed.
  • Finally, a gate stack is formed over the nanostructure stacks, isolation structure, and isolation layer.


Original Abstract Submitted

A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first nanostructure stack and a second nanostructure stack over the first fin and the second fin respectively. The method includes forming an isolation layer over the base. The method includes forming an isolation structure between the first fin and the second fin and between the first nanostructure stack and the second nanostructure stack. The isolation structure has an air gap. The method includes partially removing the isolation layer. The method includes forming a gate stack over the first nanostructure stack, the second nanostructure stack, the isolation structure, and the isolation layer.

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