20240039486. COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER simplified abstract (Fujitsu Limited)
COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER
Organization Name
Inventor(s)
Kozo Makiyama of Kawasaki (JP)
COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240039486 titled 'COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER
Simplified Explanation
The abstract describes a manufacturing method for a compound semiconductor device, specifically a semiconductor laminate structure. The structure includes an electron transit layer and an electron supply layer made from compound semiconductor material. The device also includes a source electrode, a gate electrode, and a drain electrode arranged in a first direction. A first insulating film with a first internal stress is formed over the semiconductor laminate structure, between the gate electrode and the drain electrode, and it has a slit extending in the first direction. An amplifier with a compensating circuit is used to compensate for distortion of the input signal of the semiconductor device.
- The patent application describes a manufacturing method for a compound semiconductor device with a specific laminate structure.
- The device includes electron transit and supply layers made from compound semiconductor material.
- The structure also includes source, gate, and drain electrodes arranged in a specific direction.
- A first insulating film with a specific internal stress is formed over the semiconductor laminate structure.
- The insulating film has a slit extending in the same direction as the electrodes.
- An amplifier with a compensating circuit is used to compensate for input signal distortion.
Potential Applications:
- This manufacturing method can be applied in the production of compound semiconductor devices used in various electronic applications.
- The specific laminate structure and insulating film can enhance the performance and reliability of the semiconductor device.
- The compensating circuit in the amplifier can improve the accuracy and quality of the input signal.
Problems Solved:
- The manufacturing method provides a solution for producing compound semiconductor devices with improved performance and reliability.
- The specific laminate structure and insulating film help reduce signal distortion and improve overall device functionality.
- The compensating circuit in the amplifier addresses the problem of input signal distortion, ensuring accurate and high-quality signal processing.
Benefits:
- The manufacturing method allows for the production of compound semiconductor devices with enhanced performance and reliability.
- The specific laminate structure and insulating film contribute to improved signal integrity and reduced distortion.
- The compensating circuit in the amplifier ensures accurate and high-quality signal processing, leading to improved device functionality.
Original Abstract Submitted
a manufacturing method for a compound semiconductor device, a semiconductor laminate structure, including an electron transit layer and an electron supply layer that are formed from compound semiconductor. a source electrode, a gate electrode, and a drain electrode are provided above the semiconductor laminate structure and arranged in a first direction. a first insulating film having a first internal stress is formed over the semiconductor laminate structure and between the gate electrode and the drain electrode. a slit extending in the first direction is defined in the first insulating film. an amplifier with a compensating circuit compensates distortion of an input signal of the semiconductor device.
