Samsung electronics co., ltd. (20240096894). SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract

SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Woo Cheol Shin of Suwon-si (KR)

Myung Gil Kang

Sadaaki Masuoka

Sang Hoon Lee of Suwon-si (KR)

Sung Man Whang of Suwon-si (KR)

SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096894 titled 'SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a first semiconductor layer with first and second regions, multiple first channel layers arranged vertically on the first region, a first gate electrode surrounding the first channel layers, multiple second channel layers arranged vertically on the second region, and a second gate electrode surrounding the second channel layers. The first channel layers have a first crystallographic orientation, while the second channel layers have a different second crystallographic orientation. Additionally, the thickness of the first channel layers differs from the thickness of the second channel layers.

• The semiconductor device has multiple channel layers with different crystallographic orientations and thicknesses.
• The device includes gate electrodes surrounding the channel layers to control the flow of current.
• By utilizing channel layers with varying properties, the device can achieve improved performance and efficiency.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced semiconductor devices for electronics
• High-performance computing systems
• Power management applications

Problems Solved

This technology addresses the following issues:

• Enhancing the efficiency of semiconductor devices
• Improving the performance of electronic systems
• Optimizing power consumption in electronic devices

Benefits

The benefits of this technology include:

• Increased efficiency and performance of semiconductor devices
• Enhanced control over current flow in electronic systems
• Reduced power consumption and improved energy efficiency

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Telecommunications equipment
• Automotive electronics

Possible Prior Art

One possible prior art related to this technology is the use of multiple channel layers with different crystallographic orientations in semiconductor devices to enhance performance and efficiency.

How does this technology compare to existing semiconductor devices in terms of power consumption and performance?

This article does not provide a direct comparison with existing semiconductor devices in terms of power consumption and performance. Further research and testing would be needed to determine the specific advantages of this technology over current solutions.

What are the potential challenges in implementing this technology on a large scale for commercial applications?

The article does not address the potential challenges in implementing this technology on a large scale for commercial applications. Factors such as manufacturing costs, scalability, and compatibility with existing systems could pose challenges that need to be explored further.

Original Abstract Submitted

a semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.