20240055487. SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD simplified abstract (National Central University)
Contents
SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD
Organization Name
Inventor(s)
Tien-Hsi Lee of Tao-Yuan City (TW)
Jun-Huang Wu of Tao-Yuan City (TW)
Yu-Sheng Chiou of Tao-Yuan City (TW)
Shu-Cheng Li of Tao-Yuan City (TW)
Wei-Chi Huang of Tao-Yuan City (TW)
Yu-Tang Lin of Tao-Yuan City (TW)
SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240055487 titled 'SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD
Simplified Explanation
The substrate processing method involves:
- Providing a substrate with a predetermined area and a predetermined reaction part extending from the surface towards the bottom surface.
- Performing an anodization reaction on the predetermined reaction part to convert it into a weakened layer.
- Removing the weakened layer to expose the surface of the substrate in the predetermined area.
Potential applications of this technology:
- Surface modification of substrates for various industries such as electronics, optics, and medical devices.
Problems solved by this technology:
- Providing a controlled method for modifying the surface properties of substrates.
Benefits of this technology:
- Allows for precise and controlled modification of substrate surfaces.
- Enables the creation of weakened layers for specific applications.
Original Abstract Submitted
a substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing a anodization reaction on the predetermined reaction part by an electrochemical method to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface.
