TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

The patent application describes technologies for a transistor with a thin-film ferroelectric gate dielectric. The transistor includes a thin layer of scandium aluminum nitride (ScAlN) ferroelectric gate dielectric, with the channel made of materials like gallium nitride or molybdenum disulfide. The ferroelectric polarization of the gate dielectric changes when voltage is applied and removed from the gate electrode, enabling lower voltage switching of the transistor. Additionally, the ferroelectric polarization changes when the voltage exceeds a positive or negative threshold value, allowing the transistor to be used as a one-transistor memory cell.

Thin-film ferroelectric gate dielectric technology for transistors
Scandium aluminum nitride (ScAlN) ferroelectric gate dielectric
Channel materials include gallium nitride or molybdenum disulfide
Ferroelectric polarization changes with applied and removed voltage for lower voltage switching
Ferroelectric polarization changes beyond threshold values for memory cell applications

Potential Applications

This technology can be applied in memory devices, low-power electronics, and integrated circuits.

Problems Solved

This technology solves the issue of high power consumption in traditional transistors and enables lower voltage switching for improved efficiency.

Benefits

The benefits of this technology include reduced power consumption, improved efficiency, and potential for smaller and more energy-efficient electronic devices.

Potential Commercial Applications

Potential commercial applications include memory chips, wearable electronics, IoT devices, and energy-efficient processors.

Possible Prior Art

Prior art may include research on ferroelectric materials in transistors and memory devices, as well as studies on low-power electronics and integrated circuits.

Unanswered Questions

How does the performance of transistors with thin-film ferroelectric gate dielectrics compare to traditional transistors in terms of speed and reliability?

The article does not provide specific information on the performance comparison between transistors with thin-film ferroelectric gate dielectrics and traditional transistors in terms of speed and reliability. Further research or testing may be needed to address this question.

Are there any challenges or limitations in scaling up the production of transistors with thin-film ferroelectric gate dielectrics for mass manufacturing?

The article does not discuss any challenges or limitations in scaling up the production of transistors with thin-film ferroelectric gate dielectrics for mass manufacturing. Additional studies or industry insights may be required to explore this aspect further.

Original Abstract Submitted

technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. in the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (scaln) ferroelectric gate dielectric. the channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. in one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. in another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. such a transistor can be used as a one-transistor memory cell.

Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract

Contents

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

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