18519805. SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURES AND METHODS THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chun-Fu Cheng of Hsinchu County (TW)
Chung-Wei Wu of Hsin-Chu County (TW)
Zhiqiang Wu of Hsinchu County (TW)
SEMICONDUCTOR STRUCTURES AND METHODS THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519805 titled 'SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
Simplified Explanation
The patent application describes a device with a unique gate structure on a semiconductor substrate, where the gate structure engages with a channel and a source/drain feature in an active region. The source/drain feature has a hexagonal projection onto the substrate.
- Device with active region on semiconductor substrate
- Gate structure perpendicular to active region
- Gate structure engages with channel and source/drain feature
- Source/drain feature has hexagonal projection onto substrate
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved
This technology addresses issues related to:
- Enhancing device performance
- Improving semiconductor manufacturing processes
- Increasing efficiency of electronic devices
Benefits
The benefits of this technology include:
- Higher device performance
- Enhanced functionality of integrated circuits
- Improved overall efficiency of electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Semiconductor industry
- Electronics manufacturing companies
- Research and development in the technology sector
Possible Prior Art
One possible prior art could be:
- Similar gate structures in semiconductor devices
- Previous designs with source/drain features on active regions
What are the specific dimensions of the gate structure mentioned in the patent application?
The specific dimensions of the gate structure are not provided in the abstract. Further details in the full patent application may include this information.
How does the hexagonal projection of the source/drain feature onto the semiconductor substrate impact the device's performance?
The abstract does not mention the specific impact of the hexagonal projection on the device's performance. This aspect may be explored in more detail in the full patent application.
Original Abstract Submitted
In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.
