US Patent Application 17746450. FORMATION METHOD OF SHALLOW TRENCH ISOLATION simplified abstract
Contents
FORMATION METHOD OF SHALLOW TRENCH ISOLATION
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Cheng Chen of Hsinchu City (TW)
Liang-Yin Chen of Hsinchu City (TW)
Sen-Hong Syue of Hsinchu County (TW)
FORMATION METHOD OF SHALLOW TRENCH ISOLATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17746450 titled 'FORMATION METHOD OF SHALLOW TRENCH ISOLATION
Simplified Explanation
The patent application describes a method for creating a semiconductor device. Here are the key points:
- Etching trenches in a substrate to create fin structures.
- Depositing a liner layer to line the trenches.
- Filling the trenches with an insulating layer.
- Performing an ion implantation process to the insulating layer.
- Recessing the insulating layer to create shallow trench isolation (STI) regions next to the fin structures.
- Forming a gate that crosses over the fin structures.
Original Abstract Submitted
A method of forming a semiconductor device includes etching trenches in a substrate to form fin structures, depositing a liner layer to line the trenches, filling the trenches with an insulating layer, performing an ion implantation process to the insulating layer, after performing the ion implantation process, recessing the insulating layer to form shallow trench isolation (STI) regions adjacent the fin structures, and forming a gate crossing the fin structures.
