Taiwan semiconductor manufacturing co., ltd. (20240097009). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chandrashekhar P. Savant of Hsinchu City (TW)
Tien-Wei Yu of Kaohsiung City (TW)
Ke-Chih Liu of Hsinchu City (TW)
Chia-Ming Tsai of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097009 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The semiconductor structure described in the abstract includes a substrate, a channel region, a gate structure, and source/drain regions. The gate structure consists of a high-k dielectric layer, a tungsten layer, and a fluorine-containing work function layer. The source/drain regions are located on opposite sides of the channel region.
- The semiconductor structure includes a high-k dielectric layer in the gate structure.
- A tungsten layer is present over the high-k dielectric layer in the gate structure.
- A fluorine-containing work function layer is located over the tungsten layer in the gate structure.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of high-performance semiconductor devices, such as advanced transistors for use in electronic devices.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the gate structure with innovative materials and design.
Benefits
The use of a high-k dielectric layer, tungsten layer, and fluorine-containing work function layer in the gate structure can lead to increased speed, reduced power consumption, and improved overall performance of semiconductor devices.
Potential Commercial Applications
- Enhancing the performance of computer processors
- Improving the efficiency of mobile devices
Possible Prior Art
There may be prior art related to the use of high-k dielectric layers, tungsten layers, and fluorine-containing work function layers in semiconductor devices.
Unanswered Questions
How does this technology compare to existing semiconductor structures in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor structures to evaluate the performance and efficiency improvements offered by the described technology.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges that may arise in scaling up the production of semiconductor devices using the described structure.
Original Abstract Submitted
a semiconductor structure includes a substrate, a channel region, a gate structure, and source/drain regions. the channel region is over the substrate. the gate structure is over the channel region, and includes a high-k dielectric layer, a tungsten layer over the high-k dielectric layer, and a fluorine-containing work function layer over the tungsten layer. the source/drain regions are at opposite sides of the channel region.
