Taiwan semiconductor manufacturing co., ltd. (20240096805). SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract

SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Shang-Wen Chang of Jhubei City (TW)

Yi-Hsun Chiu of Zhubei City (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Ching-Wei Tsai of Hsinchu (TW)

Wei-Cheng Lin of Taichung City (TW)

Shih-Wei Peng of Hsinchu (TW)

Jiann-Tyng Tzeng of Hsinchu (TW)

SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096805 titled 'SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME

Simplified Explanation

The method described in the abstract involves forming transistors on a substrate, creating front-side interconnect structures, etching the backside of the substrate, forming backside vias connected to the transistors, depositing a dielectric layer, and forming conductive lines for power and signal connections.

• Forming transistors on a substrate
• Creating front-side interconnect structures
• Etching the backside of the substrate
• Forming backside vias connected to the transistors
• Depositing a dielectric layer
• Forming conductive lines for power and signal connections

Potential Applications

This technology could be applied in the manufacturing of integrated circuits, microprocessors, and other electronic devices where efficient power and signal connections are crucial.

Problems Solved

This method solves the problem of efficiently connecting transistors on a substrate to power and signal lines, improving the overall performance and reliability of electronic devices.

Benefits

The benefits of this technology include improved electrical connections, reduced signal interference, and enhanced overall functionality of electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology include semiconductor manufacturing, electronics production, and integrated circuit design.

Possible Prior Art

One possible prior art for this technology could be the use of similar methods in the fabrication of semiconductor devices, although specific details may vary.

How does this method compare to traditional methods of forming transistor connections on a substrate?

This article does not provide a direct comparison between this method and traditional methods, leaving the reader to wonder about the specific advantages or disadvantages of this new approach.

What are the specific materials and processes used in each step of this method?

The article does not delve into the specific materials and processes used in each step of the method, leaving room for further exploration and understanding of the technical details involved.

Original Abstract Submitted

in an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.