Taiwan semiconductor manufacturing company, ltd. (20240136427). SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136427 titled 'SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor structure described in the abstract includes a channel structure with multiple channel features, a gate structure surrounding the channel features, two source/drain features on opposite sides of the channel structure, and inner spacers separating the gate structure from the source/drain features. The inner spacers have a lateral nitrided portion with a higher nitrogen content than the inner spacer body.
- Channel structure with multiple spaced-apart channel features
- Gate structure surrounding the channel features
- Source/drain features on opposite sides of the channel structure
- Inner spacers separating the gate structure from the source/drain features
- Inner spacers with a lateral nitrided portion for direct contact with the source/drain features
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the isolation and contact between different components.
Benefits
The use of inner spacers with a lateral nitrided portion can lead to better control over the semiconductor device's electrical properties, resulting in improved overall performance.
Potential Commercial Applications
The technology could find applications in the production of high-performance integrated circuits, microprocessors, memory devices, and other semiconductor products.
Possible Prior Art
Prior art in the field of semiconductor device manufacturing may include similar techniques for improving device performance through enhanced isolation and contact between components.
What are the specific materials used in the inner spacers and how do they contribute to the device's performance?
The specific materials used in the inner spacers, such as the lateral nitrided portion, play a crucial role in enhancing the electrical properties of the semiconductor device. The higher nitrogen content in the lateral nitrided portion improves the isolation and contact between the gate structure and the source/drain features, leading to better device performance.
How does the spacing between the channel features impact the overall functionality of the semiconductor structure?
The spacing between the channel features affects the device's electrical characteristics, such as channel resistance and carrier mobility. Optimizing the spacing can help in achieving desired performance metrics, such as speed, power consumption, and reliability, in the semiconductor structure.
Original Abstract Submitted
a semiconductor structure includes a channel structure, a gate structure, two source/drain features, and a plurality of inner spacers. the channel structure includes a plurality of channel features which are spaced apart from each other. the gate structure is disposed to surround the channel features. the source/drain features are disposed at two opposite sides of the channel structure such that each of the channel features interconnects the source/drain features. each of the inner spacers is disposed to separate the gate structure from a corresponding one of the source/drain features. each of the inner spacers includes an inner spacer body and a lateral nitrided portion. the lateral nitrided portion is in direct contact with the corresponding one of the source/drain features and has a nitrogen content greater than that of the inner spacer body.
