Samsung electronics co., ltd. (20240102160). METHOD OF DEPOSITING ATOMIC LAYER simplified abstract
Contents
- 1 METHOD OF DEPOSITING ATOMIC LAYER
METHOD OF DEPOSITING ATOMIC LAYER
Organization Name
Inventor(s)
Byounghoon Ji of Suwon-si (KR)
Kyoungwoo Hong of Suwon-si (KR)
METHOD OF DEPOSITING ATOMIC LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240102160 titled 'METHOD OF DEPOSITING ATOMIC LAYER
Simplified Explanation
The method described in the patent application involves depositing an atomic layer using a series of deposition cycles, each including specific steps such as rotating a valve plate, supplying precursors and purge gas to a chamber, and controlling the angles at which the valve plate is rotated.
- Rotating a valve plate in an exhaust port by specific angles during each deposition cycle
- Supplying precursors and purge gas to the chamber at different stages of the cycle
- Controlling the angles of rotation of the valve plate to optimize the deposition process
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the precise deposition of atomic layers in the manufacturing of electronic devices.
Problems Solved
This technology solves the problem of achieving precise control over the deposition of atomic layers, which is crucial for the development of advanced semiconductor devices.
Benefits
The benefits of this technology include improved accuracy and efficiency in the deposition process, leading to higher quality electronic devices with enhanced performance.
Potential Commercial Applications
- "Advanced Atomic Layer Deposition Technology for Semiconductor Manufacturing"
Possible Prior Art
There may be prior art related to atomic layer deposition techniques using valve plates and specific rotation angles, but further research would be needed to identify specific examples.
Unanswered Questions
How does this technology compare to existing atomic layer deposition methods in terms of efficiency and precision?
This article does not provide a direct comparison between this technology and existing atomic layer deposition methods. Further research or testing would be needed to determine the advantages and limitations of this specific approach.
What are the potential challenges or limitations of implementing this technology on an industrial scale?
The article does not address the potential challenges or limitations of scaling up this technology for industrial applications. Factors such as cost, scalability, and compatibility with existing manufacturing processes would need to be considered.
Original Abstract Submitted
a method of depositing an atomic layer is provided. the method includes a plurality of deposition cycles. each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angle while supplying a purge gas to the chamber, rotating the valve plate by a third angle while supplying a reactor to the chamber, and rotating the valve plate by the second angle while supplying the purge gas to the chamber, and wherein the first angle, the second angle, and the third angle are certain angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.
