International business machines corporation (20240096793). NON-PLANAR METAL-INSULATOR-METAL STRUCTURE simplified abstract

NON-PLANAR METAL-INSULATOR-METAL STRUCTURE

Organization Name

international business machines corporation

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Reinaldo Vega of Mahopac NY (US)

Takashi Ando of Eastchester NY (US)

David Wolpert of Poughkeepsie NY (US)

NON-PLANAR METAL-INSULATOR-METAL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096793 titled 'NON-PLANAR METAL-INSULATOR-METAL STRUCTURE

Simplified Explanation

The semiconductor device described in the patent application features an interleaved/nested structure of subtractive interconnects and damascene interconnects. This structure includes a subtractive-etched interconnect wiring level with subtractive interconnects and a damascene interconnect wiring level with damascene interconnects. The subtractive-etched interconnect wiring level consists of first electrodes with a first potential and second electrodes with a second potential different from the first potential, interleaved to optimize space. The semiconductor device also includes a damascene interconnect wiring level with other first electrodes having the first potential and other second electrodes having the second potential, also interleaved for efficiency.

• The semiconductor device has a unique structure with both subtractive and damascene interconnects, optimizing space and efficiency.
• The first and second electrodes in each wiring level have different potentials, allowing for better control and performance.
• The interleaved/nested structure of interconnects in the semiconductor device enhances overall functionality and performance.

Potential Applications

The technology described in the patent application could be applied in:

• High-performance computing systems
• Advanced communication devices
• Semiconductor manufacturing processes

Problems Solved

This technology addresses issues such as:

• Space optimization in semiconductor devices
• Efficient interconnect wiring design
• Enhanced performance and functionality

Benefits

The benefits of this technology include:

• Improved efficiency in semiconductor devices
• Enhanced performance capabilities
• Optimal use of space in wiring design

Potential Commercial Applications

This technology could be valuable in commercial applications such as:

• Consumer electronics
• Automotive systems
• Aerospace technology

Possible Prior Art

One possible prior art in this field is the use of either subtractive or damascene interconnects separately in semiconductor devices, but not in an interleaved/nested structure as described in the patent application.

Unanswered Questions

How does this technology compare to existing semiconductor interconnect designs?

This article does not provide a direct comparison with other semiconductor interconnect designs in terms of performance, efficiency, or cost-effectiveness.

What are the potential challenges in implementing this technology on a large scale?

The article does not address the potential challenges that may arise when implementing this technology in mass production, such as manufacturing complexity or compatibility issues with existing processes.

Original Abstract Submitted

a semiconductor device including an interleaved/nested structure of subtractive interconnects and damascene interconnects. the semiconductor device includes a subtractive-etched interconnect wiring level having subtractive interconnects and a damascene interconnect wiring level having damascene interconnects. the subtractive-etched interconnect wiring level includes first electrodes that have a first potential second electrodes that have a second potential different from the first potential, with the second electrodes generated to interleave the first electrodes. the semiconductor also includes a damascene interconnect wiring level that includes other first electrodes having the first potential, and other second electrodes having the second potential. in the damascene interconnect wiring level, the other second electrodes are also interleaved by the other first electrodes.