18513404. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Ling Yeh of Hsinchu City (TW)

Pravanshu Mohanta of Mumbai (IN)

Ching-Yu Chen of Hsinchu City (TW)

Jiang-He Xie of Hsinchu City (TW)

Yu-Shine Lin of Hsinchu City (TW)

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18513404 titled 'HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

Simplified Explanation

The semiconductor device described in the patent application is a High Electron Mobility Transistor (HEMT) with a back barrier layer made of Aluminum Nitride (AlN) to block electron leakage and improve threshold voltage.

• Gallium Nitride (GaN) layer
• Front barrier layer over the GaN layer
• Source electrode, drain electrode, and gate electrode formed over the front barrier layer
• 2-Dimensional Electron Gas (2-DEG) in the GaN layer at the first interface between the GaN layer and the front barrier layer
• Back barrier layer in the GaN layer made of Aluminum Nitride (AlN)

Potential Applications

• High-frequency communication systems
• Radar systems
• Satellite communication systems

Problems Solved

• Electron leakage in HEMTs
• Threshold voltage improvement
• Enhanced performance of GaN-based devices

Benefits

• Improved device reliability
• Enhanced device performance
• Increased efficiency in high-power applications

Original Abstract Submitted

Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).