Taiwan semiconductor manufacturing co., ltd. (20240096646). CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES simplified abstract

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CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Shahaji B. More of Hsinchu City (TW)

CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096646 titled 'CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES

Simplified Explanation

The present disclosure describes a method of forming an epitaxial layer on a substrate in a chamber. The method includes cleaning the chamber with a first etching gas and depositing the epitaxial layer on the substrate. Deposition of the epitaxial layer includes epitaxially growing a first portion of the epitaxial layer with a precursor, cleaning the substrate and the chamber with a flush of a second etching gas different from the first etching gas, and epitaxially growing a second portion of the epitaxial layer with the precursor. The first portion and the second portion have the same composition. The method further includes etching a portion of the epitaxial layer with a third etching gas having a flow rate higher than that of the second etching gas.

  • Explanation:

- Method for forming an epitaxial layer on a substrate in a chamber - Cleaning the chamber with a first etching gas - Depositing the epitaxial layer on the substrate - Epitaxially growing first and second portions of the layer with a precursor - Cleaning the substrate and chamber with a second etching gas - Etching a portion of the epitaxial layer with a third etching gas

    • Potential Applications:

- Semiconductor manufacturing - Thin film deposition - Solar cell production

    • Problems Solved:

- Contamination in the chamber - Uniformity of the epitaxial layer - Efficiency of the deposition process

    • Benefits:

- Improved quality of epitaxial layers - Enhanced control over the deposition process - Reduced maintenance requirements for the chamber

    • Potential Commercial Applications:

- Semiconductor industry - Optoelectronics sector - Research and development laboratories

    • Possible Prior Art:

- Methods for epitaxial layer deposition in semiconductor manufacturing - Techniques for cleaning chambers in thin film deposition processes

    • Unanswered Questions:

1. What specific types of substrates are most suitable for this method of epitaxial layer formation? 2. Are there any limitations to the size or thickness of the epitaxial layer that can be achieved using this technique?


Original Abstract Submitted

the present disclosure describes a method of forming an epitaxial layer on a substrate in a chamber. the method includes cleaning the chamber with a first etching gas and depositing the epitaxial layer on the substrate. deposition of the epitaxial layer includes epitaxially growing a first portion of the epitaxial layer with a precursor, cleaning the substrate and the chamber with a flush of a second etching gas different from the first etching gas, and epitaxially growing a second portion of the epitaxial layer with the precursor. the first portion and the second portion have the same composition. the method furthers includes etching a portion of the epitaxial layer with a third etching gas having a flow rate higher than that of the second etching gas.

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