Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract
Contents
- 1 SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Wilfred Gomes of Portland OR (US)
Tahir Ghani of Portland OR (US)
Anand Murthy of Portland OR (US)
Sagar Suthram of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105635 titled 'SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS
Simplified Explanation
The abstract describes an integrated circuit (IC) die with conductive structures, a self-alignment layer, and conductive vias.
- The IC die includes a first layer with conductive structures in an interlayer dielectric (ILD) material.
- A self-alignment layer is in contact with non-conductive regions at the first surface of the first layer.
- A second layer with ILD material is in contact with the self-alignment layer and the conductive structures.
- Conductive vias pass through the self-alignment layer and the second layer, in contact with the conductive structures.
Potential Applications
This technology could be applied in the manufacturing of advanced integrated circuits, such as microprocessors, memory chips, and other semiconductor devices.
Problems Solved
This technology helps in achieving precise alignment of conductive structures and vias, improving the performance and reliability of the integrated circuit.
Benefits
The self-alignment layer simplifies the manufacturing process, reduces production costs, and enhances the overall quality of the IC die.
Potential Commercial Applications
"Advanced Integrated Circuit Die with Self-Alignment Layer: Commercial Applications"
Possible Prior Art
There may be prior art related to self-alignment techniques in semiconductor manufacturing processes, but specific examples are not provided in the abstract.
Unanswered Questions
How does the self-alignment layer improve the performance of the integrated circuit?
The abstract mentions the benefits of the self-alignment layer, but it does not elaborate on how exactly it enhances the performance of the IC die.
Are there any limitations or challenges associated with the use of self-alignment layers in integrated circuit manufacturing?
While the abstract highlights the advantages of the self-alignment layer, it does not mention any potential drawbacks or obstacles that may arise when implementing this technology.
Original Abstract Submitted
an integrated circuit (ic) die includes a first layer with conductive structures formed in a interlayer dielectric (ild) material, with a portion of the conductive structures at a first surface of the first layer, a self-alignment layer in contact with non-conductive regions at the first surface of the first layer, a second layer with ild material in contact with the self-alignment layer and the portion of the conductive structures at the first surface of the first layer, and conductive vias through the self-alignment layer and the second layer in contact with the portion of the conductive structures at the first surface of the first layer. the self-alignment layer may include a first material where the self-alignment layer is in contact with the conductive vias and a second material where the self-alignment layer is not in contact with the conductive vias. other embodiments are disclosed and claimed.
