TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

The patent application describes technologies for a field effect transistor (FET) with a ferroelectric gate dielectric. Here are some key points from the abstract:

Perovskite stack grown on a buffer layer for manufacturing the transistor
Perovskite stack includes doped semiconductor layers alternating with other lattice-matched layers
Doped semiconductor layers can be improved in quality by growing them on lattice-matched layers
Lattice-matched layers can be etched away, leaving doped semiconductor layers as fins for a ribbon FET
Interlayer deposited on top of a semiconductor layer, with a ferroelectric layer on top, bridging a gap in lattice parameters

Potential Applications

The technology described in the patent application could have potential applications in the development of high-performance field effect transistors with ferroelectric gate dielectrics. These transistors could be used in various electronic devices, such as memory devices, logic circuits, and sensors.

Problems Solved

This technology addresses the challenge of improving the quality of doped semiconductor layers in FETs with ferroelectric gate dielectrics. By growing doped semiconductor layers on lattice-matched layers and using an interlayer to bridge gaps in lattice parameters, the performance and reliability of the transistors can be enhanced.

Benefits

The benefits of this technology include improved quality of doped semiconductor layers, potentially leading to higher performance and efficiency in field effect transistors. The use of ferroelectric gate dielectrics can also enable lower power consumption and faster switching speeds in electronic devices.

Potential Commercial Applications

The technology described in the patent application could be valuable for companies involved in the development and manufacturing of semiconductor devices, particularly those focused on advanced transistor technologies. Potential commercial applications include the production of high-performance memory devices, logic circuits, and sensors.

Possible Prior Art

One possible prior art in this field could be the use of different gate dielectric materials in field effect transistors to improve performance and reduce power consumption. Researchers and companies may have explored various materials and structures to enhance the functionality of transistors in the past.

Unanswered Questions

How does the performance of FETs with ferroelectric gate dielectrics compare to traditional FETs in terms of speed and power consumption?

The article does not provide a direct comparison between the performance of FETs with ferroelectric gate dielectrics and traditional FETs. Further research or testing may be needed to evaluate the speed and power consumption of these different transistor technologies.

Are there any limitations or challenges associated with integrating ferroelectric gate dielectrics into FETs on a large scale?

The article does not discuss any potential limitations or challenges that may arise when integrating ferroelectric gate dielectrics into FETs on a large scale. Understanding the scalability and reliability of this technology could be important for its practical implementation in commercial devices.

Original Abstract Submitted

technologies for a field effect transistor (fet) with a ferroelectric gate dielectric are disclosed. in an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. the perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers, such as undoped semiconductor layers. growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. the lattice-matched layers can be preferentially etched away, leaving the doped semiconductor layers as fins for a ribbon fet. in another embodiment, an interlayer can be deposited on top of a semiconductor layer, and a ferroelectric layer can be deposited on the interlayer. the interlayer can bridge a gap in lattice parameters between the semiconductor layer and the ferroelectric layer.

Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract

Contents

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

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