18516431. CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this method compare to existing techniques for epitaxial layer deposition?
- 1.11 What are the specific parameters and conditions required for optimal results using this method?
- 1.12 Original Abstract Submitted
CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shahaji B. More of Hsinchu City (TW)
CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516431 titled 'CLEANING PROCESS FOR SOURCE/DRAIN EPITAXIAL STRUCTURES
Simplified Explanation
The present disclosure describes a method of forming an epitaxial layer on a substrate in a chamber. The method includes cleaning the chamber with a first etching gas and depositing the epitaxial layer on the substrate. Deposition of the epitaxial layer includes epitaxially growing a first portion of the epitaxial layer with a precursor, cleaning the substrate and the chamber with a flush of a second etching gas different from the first etching gas, and epitaxially growing a second portion of the epitaxial layer with the precursor. The first portion and the second portion have the same composition. The method further includes etching a portion of the epitaxial layer with a third etching gas having a flow rate higher than that of the second etching gas.
- Method of forming an epitaxial layer on a substrate in a chamber
- Cleaning the chamber with a first etching gas
- Depositing the epitaxial layer on the substrate
- Epitaxially growing first and second portions of the epitaxial layer with a precursor
- Cleaning the substrate and chamber with a second etching gas
- Etching a portion of the epitaxial layer with a third etching gas
Potential Applications
This technology could be applied in the semiconductor industry for the production of advanced electronic devices.
Problems Solved
This technology solves the problem of achieving high-quality epitaxial layers on substrates in a controlled chamber environment.
Benefits
The benefits of this technology include improved epitaxial layer quality, precise control over the deposition process, and enhanced performance of electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology could include semiconductor manufacturing, research and development in the electronics industry, and production of high-performance electronic components.
Possible Prior Art
One possible prior art could be the use of similar methods for epitaxial layer deposition in semiconductor manufacturing processes.
Unanswered Questions
How does this method compare to existing techniques for epitaxial layer deposition?
This article does not provide a direct comparison to existing techniques for epitaxial layer deposition. Further research or experimentation may be needed to determine the advantages and limitations of this method compared to others.
What are the specific parameters and conditions required for optimal results using this method?
The article does not delve into specific parameters and conditions required for optimal results using this method. Additional information or experimentation may be necessary to determine the precise requirements for successful epitaxial layer formation.
Original Abstract Submitted
The present disclosure describes a method of forming an epitaxial layer on a substrate in a chamber. The method includes cleaning the chamber with a first etching gas and depositing the epitaxial layer on the substrate. Deposition of the epitaxial layer includes epitaxially growing a first portion of the epitaxial layer with a precursor, cleaning the substrate and the chamber with a flush of a second etching gas different from the first etching gas, and epitaxially growing a second portion of the epitaxial layer with the precursor. The first portion and the second portion have the same composition. The method furthers includes etching a portion of the epitaxial layer with a third etching gas having a flow rate higher than that of the second etching gas.
