US Patent Application 17827356. HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES simplified abstract
Contents
HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES
Organization Name
Inventor(s)
Xiaolin C. Chen of San Ramon CA (US)
Baiwei Wang of Santa Clara CA (US)
Rohan Puligoru Reddy of San Jose CA (US)
Wanxing Xu of Sunnyvale CA (US)
Zhenjiang Cui of San Jose CA (US)
Anchuan Wang of San Jose CA (US)
HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17827356 titled 'HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES
Simplified Explanation
The patent application describes a method for semiconductor processing using an oxygen-containing precursor and a halide precursor.
- The method involves providing the oxygen-containing precursor to a semiconductor processing chamber where a substrate is located.
- The substrate has a trench between two columns and recesses in at least one of the columns containing molybdenum-containing metal regions.
- A molybdenum-containing first liner is formed on the sidewall of the trench, connecting at least two of the molybdenum-containing metal regions.
- A plasma of the oxygen-containing precursor is formed and the molybdenum-containing first liner is exposed to the plasma effluents, resulting in the formation of an oxidized portion of molybdenum.
- A halide precursor is then provided and the oxidized portion of molybdenum is removed from the sidewall of the trench by contacting it with the plasma effluents of the halide precursor.
Original Abstract Submitted
Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned. The substrate may include a trench formed between two columns and molybdenum-containing metal regions in a plurality of recesses formed in at least one of the columns. At least two of the molybdenum-containing metal regions may be connected by a molybdenum-containing first liner formed on at least a portion of a sidewall of the trench. The methods may include forming a plasma of the oxygen-containing precursor. The methods may include contacting the molybdenum-containing first liner with plasma effluents of the oxygen-containing precursor, thereby forming an oxidized portion of molybdenum. The methods may include providing a halide precursor. The methods may include contacting oxidized portion of the molybdenum with plasma effluents of the halide precursor, thereby removing the oxidized portion of molybdenum from the sidewall of the trench.
