20240038863. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Su Min Cho of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240038863 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with two regions, a first silicon-germanium film formed inside the substrate in the first region, a first gate trench defined by the first silicon-germanium film, a first gate insulating film on the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region on both sides of the first metallic gate electrode, a second gate insulating film in the second region, and a second metallic gate electrode on the second gate insulating film.
- The device includes a substrate with two regions, allowing for different functionalities in different areas.
- The first silicon-germanium film is conformally formed inside the substrate, providing a uniform and continuous layer.
- The first gate trench defined by the first silicon-germanium film allows for precise control of the gate structure.
- The first gate insulating film extends along the profile of the first gate trench, ensuring proper insulation.
- The first metallic gate electrode provides a conductive element for controlling the device.
- The source/drain region on both sides of the first metallic gate electrode allows for efficient current flow.
- The second gate insulating film and second metallic gate electrode provide additional control and functionality in the second region.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be applied in integrated circuits, allowing for improved performance and functionality.
Problems Solved
- The device solves the problem of precise gate control by using the first silicon-germanium film and first gate trench.
- It addresses the need for proper insulation with the first gate insulating film.
- The source/drain region solves the problem of efficient current flow in the device.
Benefits
- The device offers improved performance and functionality in electronic devices.
- It allows for precise control and efficient current flow, leading to better device operation.
- The use of different regions and materials provides versatility and flexibility in device design and functionality.
Original Abstract Submitted
a semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.
