Taiwan semiconductor manufacturing co., ltd. (20240097001). METAL SOURCE/DRAIN FEATURES simplified abstract
Contents
- 1 METAL SOURCE/DRAIN FEATURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL SOURCE/DRAIN FEATURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
- 1.9.3 What specific manufacturing processes are involved in creating the vertical stack of channel members and the gate structure in this semiconductor device?
- 1.10 Original Abstract Submitted
METAL SOURCE/DRAIN FEATURES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Pei-Yu Wang of Hsinchu City (TW)
METAL SOURCE/DRAIN FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097001 titled 'METAL SOURCE/DRAIN FEATURES
Simplified Explanation
A semiconductor device described in the abstract includes a vertical stack of channel members, a gate structure, and first and second source/drain features. Each channel member extends between the source/drain features and is spaced apart from the first source/drain feature by a silicide feature.
- Vertical stack of channel members
- Gate structure surrounding the vertical stack
- First and second source/drain features
- Silicide feature separating the channel members from the first source/drain feature
Potential Applications
The technology described in the patent application could be applied in:
- Advanced semiconductor devices
- High-performance electronics
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving efficiency in semiconductor devices
Benefits
The benefits of this technology include:
- Increased speed and reliability of semiconductor devices
- Better control over electrical properties
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor device structures with similar channel member configurations
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures.
What specific manufacturing processes are involved in creating the vertical stack of channel members and the gate structure in this semiconductor device?
The article does not delve into the specific manufacturing processes involved in creating the vertical stack of channel members and the gate structure.
Original Abstract Submitted
a semiconductor device according to the present disclosure includes a vertical stack of channel members, a gate structure over and around the vertical stack of channel members, and a first source/drain feature and a second source/drain feature. each of the vertical stack of channel members extends along a first direction between the first source/drain feature and the second source/drain feature. each of the vertical stack of channel members is spaced apart from the first source/drain feature by a silicide feature.
