18522064. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chandrashekhar P. Savant of Hsinchu City (TW)
Tien-Wei Yu of Kaohsiung City (TW)
Ke-Chih Liu of Hsinchu City (TW)
Chia-Ming Tsai of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522064 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The semiconductor structure described in the abstract includes a substrate, a channel region, a gate structure, and source/drain regions. The gate structure consists of a high-k dielectric layer, a tungsten layer, and a fluorine-containing work function layer. The source/drain regions are located at opposite sides of the channel region.
- Substrate, channel region, gate structure, and source/drain regions are key components of the semiconductor structure.
- The gate structure comprises a high-k dielectric layer, a tungsten layer, and a fluorine-containing work function layer.
- Source/drain regions are positioned on opposite sides of the channel region.
Potential Applications
The semiconductor structure with the described features could be applied in:
- Advanced electronic devices
- High-performance computing systems
- Integrated circuits
Problems Solved
This technology helps in:
- Enhancing the performance of semiconductor devices
- Improving the efficiency of electronic components
- Enabling faster data processing
Benefits
The benefits of this technology include:
- Increased speed and reliability of electronic devices
- Reduction in power consumption
- Enhanced overall performance of semiconductor structures
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Semiconductor manufacturing industry
- Consumer electronics market
- Telecommunications sector
Possible Prior Art
One possible prior art could be the use of different materials in gate structures to improve the performance of semiconductor devices.
Unanswered Questions
How does the fluorine-containing work function layer impact the overall functionality of the semiconductor structure?
The fluorine-containing work function layer plays a crucial role in determining the work function of the gate structure, which in turn affects the device performance.
What are the specific characteristics of the high-k dielectric layer that make it suitable for this semiconductor structure?
The high-k dielectric layer is chosen for its ability to provide high capacitance while minimizing leakage currents, thus improving the efficiency of the device.
Original Abstract Submitted
A semiconductor structure includes a substrate, a channel region, a gate structure, and source/drain regions. The channel region is over the substrate. The gate structure is over the channel region, and includes a high-k dielectric layer, a tungsten layer over the high-k dielectric layer, and a fluorine-containing work function layer over the tungsten layer. The source/drain regions are at opposite sides of the channel region.
