US Patent Application 17827652. LOW TEMPERATURE SILICON OXIDE GAP FILL simplified abstract
Contents
LOW TEMPERATURE SILICON OXIDE GAP FILL
Organization Name
Inventor(s)
Soham Asrani of San Jose CA (US)
Bhargav S. Citla of Fremont CA (US)
Srinivas D. Nemani of Saratoga CA (US)
Ellie Y. Yieh of San Jose CA (US)
LOW TEMPERATURE SILICON OXIDE GAP FILL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17827652 titled 'LOW TEMPERATURE SILICON OXIDE GAP FILL
Simplified Explanation
- The patent application is about methods for filling gaps within substrate features using a flowable silicon film. - The flowable silicon film is thicker on the bottom and top surfaces of the feature than on the sidewall surface. - An etch plasma is used to remove the silicon film from the sidewall surface. - A conversion plasma is then used to convert the silicon film into a silicon-based gapfill material, such as silicon oxide. - In some embodiments, the silicon film is preferentially converted on the top and bottom surfaces before being etched from the sidewall surface.
Original Abstract Submitted
Embodiments of the disclosure relate to methods for forming silicon based gapfill within substrate features. A flowable silicon film is formed within the feature with a greater thickness on the bottom and top surfaces than the sidewall surface. An etch plasma removes the silicon film from the sidewall surface. A conversion plasma is used to convert the silicon film to a silicon based gapfill (e.g., silicon oxide). In some embodiments, the silicon film is preferentially converted on the top and bottom surface before being etched from the sidewall surface.
