Taiwan semiconductor manufacturing company, ltd. (20240105462). FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS simplified abstract

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FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yi-Hsiu Chen of Hsinchu (TW)

Kenichi Sano of Hsinchu (TW)

FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105462 titled 'FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS

Simplified Explanation

The patent application describes a selective etching process for a semiconductor device using a self-assembled monolayer-forming compound to protect certain dielectric regions while etching others with a dilute acid solution.

  • Self-assembled monolayer-forming compound is used to selectively cover the first dielectric region.
  • Second dielectric region is exposed by the self-assembled monolayer.
  • Dilute acid solution is used to etch the second dielectric region while protecting the first dielectric region.

Potential Applications

The technology can be applied in semiconductor manufacturing processes where selective etching is required to create intricate patterns on the device.

Problems Solved

This technology solves the problem of accurately etching specific regions of a semiconductor device without affecting other areas, leading to improved device performance and reliability.

Benefits

The benefits of this technology include precise control over the etching process, reduced risk of damage to the device, and increased efficiency in semiconductor manufacturing.

Potential Commercial Applications

One potential commercial application of this technology is in the production of advanced semiconductor devices for electronics, telecommunications, and other high-tech industries.

Possible Prior Art

Prior art may include similar processes using different materials or techniques for selective etching in semiconductor devices.

Unanswered Questions

How does this technology compare to other selective etching methods in terms of efficiency and precision?

This article does not provide a direct comparison with other selective etching methods, leaving the reader to wonder about the relative advantages and disadvantages of this technology.

What are the limitations of using a self-assembled monolayer-forming compound in the etching process?

The article does not address any potential limitations or challenges associated with using a self-assembled monolayer-forming compound, leaving room for further exploration into this aspect of the technology.


Original Abstract Submitted

a selective etching process includes treating a first dielectric region and a second dielectric region of a semiconductor device with a self-assembled-monolayer-forming compound to form a self-assembled monolayer to selectively cover the first dielectric region so as to expose the second dielectric region; and selectively etching the second dielectric region using a dilute acid solution while the first dielectric region is protected by the self-assembled monolayer from being etched by the dilute acid solution.