20240021678. PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS simplified abstract (MACOM Technology Solutions Holdings, Inc.)
Contents
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS
Organization Name
MACOM Technology Solutions Holdings, Inc.
Inventor(s)
Kevin J. Linthicum of Cary NC (US)
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240021678 titled 'PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS
Simplified Explanation
The abstract describes a semiconductor structure that inhibits the conductivity of parasitic channels. It includes a substrate, a iii-nitride material region on top of the substrate, and two species implanted in specific regions of the substrate and iii-nitride material region. The first species is implanted in a pattern across the substrate, while the second species is implanted in a pattern across the iii-nitride material region. The surface region of the substrate contains a parasitic channel, but the region where the first species is implanted either has a low-conductivity parasitic channel or is free of the parasitic channel.
- The semiconductor structure inhibits the conductivity of parasitic channels.
- It includes a substrate and a iii-nitride material region.
- Two species are implanted in specific regions of the substrate and iii-nitride material region.
- The first species is implanted in a pattern across the substrate.
- The second species is implanted in a pattern across the iii-nitride material region.
- The surface region of the substrate contains a parasitic channel.
- The region where the first species is implanted either has a low-conductivity parasitic channel or is free of the parasitic channel.
Potential Applications:
- This technology can be applied in semiconductor devices to prevent the unwanted flow of current through parasitic channels.
- It can improve the performance and efficiency of electronic devices by reducing leakage currents.
Problems Solved:
- Parasitic channels can cause unwanted current flow and reduce the performance of semiconductor devices.
- This technology solves the problem of parasitic channels by inhibiting their conductivity.
Benefits:
- Improved device performance and efficiency.
- Reduction in leakage currents.
- Enhanced reliability and functionality of semiconductor devices.
Original Abstract Submitted
semiconductor structures that inhibit the conductivity of parasitic channels are described. in one example, a semiconductor structure includes a substrate, a iii-nitride material region over a top surface of the substrate, a first species implanted within at least one region of surface region of the substrate in a first pattern spatially defined across a lateral dimension of the substrate, and a second species implanted within at least one region of the iii-nitride material region. the second species can be implanted in a second pattern spatially defined across the lateral dimension of the substrate. the surface region of the substrate includes a parasitic channel. the at least one region of the substrate in which the first species is implanted includes a low-conductivity parasitic channel or is free of the parasitic channel.
