18525473. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 Semiconductor Device and Method
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Device and Method - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Semiconductor Device and Method
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ching-Yu Chang of Taipei City (TW)
Jei Ming Chen of Tainan City (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525473 titled 'Semiconductor Device and Method
Simplified Explanation
The abstract describes a method of forming a semiconductor device by depositing a gap-filling material in an opening in a mask layer, performing a plasma treatment to reduce the height of the material, and then patterning the substrate using the material as a mask.
- Formation of mask layer over substrate
- Creation of opening in mask layer
- Deposition of gap-filling material in opening
- Plasma treatment to reduce height of gap-filling material
- Removal of mask layer
- Patterning of substrate using the reduced material as a mask
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and memory devices.
Problems Solved
This method helps in achieving precise patterning on semiconductor substrates by effectively filling gaps and reducing the height of the material, leading to improved device performance and reliability.
Benefits
- Enhanced precision in semiconductor device fabrication
- Improved device performance and reliability
- Cost-effective manufacturing process
Potential Commercial Applications
- Semiconductor industry for manufacturing integrated circuits
- Electronics industry for producing sensors and memory devices
Possible Prior Art
One possible prior art could be the use of chemical mechanical polishing (CMP) techniques for planarizing semiconductor substrates, although this method may not specifically address the gap-filling and patterning steps described in this patent application.
Unanswered Questions
How does the plasma treatment specifically reduce the height of the gap-filling material?
The exact mechanism by which the plasma treatment reduces the height of the material is not detailed in the abstract. Further information on the plasma parameters and their effects would provide clarity on this aspect.
What types of substrates are compatible with this method?
The abstract does not specify the compatibility of this method with different types of semiconductor substrates. Understanding the range of substrates that can be effectively patterned using this technique would be beneficial for potential users.
Original Abstract Submitted
A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.
