18516106. GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yi-An Lai of Taipei City (TW)

Chan-Hong Chern of Palo Alto CA (US)

Cheng-Hsiang Hsieh of Taipei City (TW)

GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18516106 titled 'GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF

Simplified Explanation

The patent application describes an integrated circuit with two circuits made of Group III-V compound materials, each operating at different voltage ranges and having independent test terminals.

  • Group III-V compound materials used in the integrated circuit
  • Two circuits operating at different voltage ranges
  • Independent test terminals for each circuit
  • Test signals applied to test terminals are independent from each other

Potential Applications

The technology could be used in:

  • High-performance computing
  • Telecommunications
  • Aerospace and defense industries

Problems Solved

The integrated circuit solves issues related to:

  • Voltage compatibility between circuits
  • Testing and debugging of complex circuits
  • Improving overall circuit performance

Benefits

The benefits of this technology include:

  • Enhanced circuit efficiency
  • Simplified testing procedures
  • Increased reliability and performance of integrated circuits


Original Abstract Submitted

An integrated circuit includes a first circuit, formed based on one or more Group III-V compound materials, that is configured to operate with a first voltage range. The integrated circuit includes a second circuit, also formed based on the one or more Group III-V compound materials, that is operatively coupled to the first circuit and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range. The integrated circuit includes a set of first test terminals connected to the first circuit. The integrated circuit includes a set of second test terminals connected to the second circuit. Test signals applied to the set of first test terminals and to the set of second test terminals, respectively, are independent from each other.