Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Tsung-Lin Lee of Hsinchu City (TW)

Chih-Hao Chang of Chu-Bei City (TW)

Chih-Hsin Ko of Fongshan City (TW)

Feng Yuan of Yonghe City (TW)

Jeff J. Xu of Jhubei City (TW)

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097034 titled 'METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

Simplified Explanation

The field effect transistor described in the patent application includes a fin structure on a substrate, an isolation structure in the substrate, and a source/drain recess cavity below the substrate's top surface. A strained structure is present in the source/drain recess cavity, consisting of a lower portion with a first strained layer in direct contact with the isolation structure and a dielectric layer, and an upper portion with a second strained layer overlying the first strained layer.

• Fin structure on substrate
• Isolation structure in substrate
• Source/drain recess cavity below substrate's top surface
• Strained structure in recess cavity with lower and upper portions
• First strained layer in direct contact with isolation structure and dielectric layer
• Second strained layer overlying first strained layer

Potential Applications

The technology described in the patent application could be applied in the development of high-performance field effect transistors for various electronic devices, such as smartphones, tablets, and computers.

Problems Solved

This technology helps in improving the performance and efficiency of field effect transistors by introducing strained structures in the source/drain recess cavity, which can enhance carrier mobility and overall device performance.

Benefits

The benefits of this technology include increased transistor performance, improved device efficiency, and potentially reduced power consumption in electronic devices utilizing these transistors.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for the production of advanced electronic devices with enhanced performance and efficiency.

Possible Prior Art

One possible prior art for this technology could be the use of strained structures in field effect transistors to improve carrier mobility and device performance. Research and patents related to strained structures in semiconductor devices may exist in the prior art.

How does the strained structure impact the overall performance of the field effect transistor?

The strained structure in the source/drain recess cavity is designed to enhance carrier mobility, but the specific effects on transistor performance need further clarification through experimental data and analysis.

What are the potential challenges in integrating this technology into existing semiconductor manufacturing processes?

The integration of strained structures into field effect transistors may pose challenges in terms of fabrication complexity, material compatibility, and scalability. Further research and development are needed to address these potential challenges.

Original Abstract Submitted

a field effect transistor includes a substrate comprising a fin structure. the field effect transistor further includes an isolation structure in the substrate. the field effect transistor further includes a source/drain (s/d) recess cavity below a top surface of the substrate. the s/d recess cavity is between the fin structure and the isolation structure. the field effect transistor further includes a strained structure in the s/d recess cavity. the strain structure includes a lower portion. the lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. the strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.