US Patent Application 17871505. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract

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PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY

Organization Name

Applied Materials, Inc.

Inventor(s)

Zhepeng Cong of San Jose CA (US)

Ala Moradian of Sunnyvale CA (US)

Tao Sheng of Santa Clara CA (US)

Nimrod Smith of Cupertino CA (US)

Ashur J. Atanos of San Jose CA (US)

Vinh N. Tran of San Jose CA (US)

PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17871505 titled 'PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY

Simplified Explanation

- The patent application is about flow guides, process kits, and methods for processing chambers in semiconductor manufacturing. - The flow guide described in the patent includes a plate with a first face and a second face. - The flow guide also includes a first fin set and a second fin set extending from the second face. - The second fin set is spaced from the first fin set, creating a flow path between them. - The flow path has a serpentine pattern between the first fin set and the second fin set. - The purpose of this flow guide is to facilitate deposition process adjustability in semiconductor manufacturing.


Original Abstract Submitted

The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.