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Category:H01L21/8234
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Pages in category "H01L21/8234"
The following 200 pages are in this category, out of 442 total.
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- 18518670. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18519263. INTEGRATED CIRCUITS WITH GATE CUT FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519714. SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18520214. SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520730. SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520872. DEVICE LAYER INTERCONNECTS simplified abstract (Intel Corporation)
- 18521140. Footing Removal in Cut-Metal Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18521951. NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522687. UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524242. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18525521. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526360. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526395. SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526397. TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526444. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18527151. SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18543784. CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
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- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105716). INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG simplified abstract
- Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract
- Intel corporation (20240105770). NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE simplified abstract
- Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract
- Intel corporation (20240113104). FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract
- Intel corporation (20240113106). ETCH STOP LAYER FOR METAL GATE CUT simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240113108). WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113109). PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113128). HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS simplified abstract
- Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 4th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240096699). SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract
- International business machines corporation (20240096751). SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract
- International business machines corporation (20240096752). VIA RESISTANCE TO BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240105605). SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK simplified abstract
- International business machines corporation (20240105607). BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK simplified abstract
- International business machines corporation (20240105608). LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY simplified abstract
- International business machines corporation (20240105768). EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER simplified abstract
- International business machines corporation (20240105769). STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE simplified abstract
- International business machines corporation (20240112984). METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract
- International business machines corporation (20240113023). Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract
- International business machines corporation (20240113125). POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract
- International business machines corporation (20240113193). BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract
- International business machines corporation (20240113200). INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract
- International business machines corporation (20240120256). Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract
- International Business Machines Corporation patent applications on April 11th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 1st, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- International Business Machines Corporation patent applications on January 18th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
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- Samsung electronics co., ltd. (20240096879). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105717). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240113110). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240120274). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128264). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240136230). METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136354). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240136426). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240096643). SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096705). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096707). Footing Removal in Cut-Metal Process simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096867). SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096880). WORK FUNCTION DESIGN TO INCREASE DENSITY OF NANOSHEET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096882). NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096892). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096895). UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096897). TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096942). SEMICONDUCTOR DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096976). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096985). SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096993). TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096996). SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097011). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240098959). FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128125). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128126). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128375). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128376). METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105460). Hard Mask Removal Method simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105515). TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105516). ASYMMETRIC SOURCE/DRAIN EPITAXY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105517). SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105518). METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105519). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105521). SEMICONDUCTOR DEVICE STRUCTURE WITH ISOLATION LAYER AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105719). INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105772). INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105775). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105779). INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105786). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105805). SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105806). Multi-Gate Devices And Method Of Forming The Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105814). INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105817). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105849). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105850). FINFET STRUCTURE WITH FIN TOP HARD MASK AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112954). SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113112). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113113). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113164). FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113166). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113172). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113183). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113187). COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113188). INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113203). SPACER FORMATION METHOD FOR MULTI-GATE DEVICE AND STRUCTURES THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113205). SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113206). MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120334). SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120376). TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120377). TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136183). METHOD OF BREAKING THROUGH ETCH STOP LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136220). Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136228). Ion Implantation For Nano-FET simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136428). Semiconductor Device and Method simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Texas instruments incorporated (20240113217). TRENCH SHIELDED TRANSISTOR simplified abstract
- TEXAS INSTRUMENTS INCORPORATED patent applications on April 4th, 2024
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- US Patent Application 17752461. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 17804438. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract
- US Patent Application 17824329. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- US Patent Application 17824936. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 17824942. METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM simplified abstract
- US Patent Application 17825698. SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING simplified abstract
- US Patent Application 17827824. HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 18220397. Separate Epitaxy Layers for Nanowire Stack GAA Device simplified abstract
- US Patent Application 18227236. HIGH-IMPLANT CHANNEL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- US Patent Application 18229682. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18232159. Channel Structures For Semiconductor Devices simplified abstract
- US Patent Application 18232171. Semiconductor Device With Isolation Structures simplified abstract
- US Patent Application 18232181. Profile Control Of Gate Structures In Semiconductor Devices simplified abstract
- US Patent Application 18232191. Gate Spacers In Semiconductor Devices simplified abstract
- US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18232544. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract
- US Patent Application 18344441. Semiconductor Device and Method simplified abstract
- US Patent Application 18345188. METAL GATE STRUCTURE CUTTING PROCESS simplified abstract
- US Patent Application 18349448. INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS simplified abstract
- US Patent Application 18349486. INPUT/OUTPUT DEVICES simplified abstract
- US Patent Application 18349617. SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF simplified abstract
- US Patent Application 18351149. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18357449. Nanostructure Field-Effect Transistor Device and Method of Forming simplified abstract
- US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract
- US Patent Application 18358609. Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer simplified abstract
- US Patent Application 18358708. Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same simplified abstract
- US Patent Application 18359051. SEMICONDUCTOR DEVICE WITH REDUCED LOADING EFFECT simplified abstract
- US Patent Application 18359492. Semiconductor Device and Method simplified abstract
- US Patent Application 18359507. Semiconductor Device and Method of Manufacturing simplified abstract
- US Patent Application 18359542. EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract
- US Patent Application 18359747. REPLACEMENT GATE PROCESS FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18360007. FIN END ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18360166. Semiconductor Devices Having Gate Dielectric Layers of Varying Thicknesses and Methods of Forming the Same simplified abstract