Taiwan semiconductor manufacturing co., ltd. (20240096895). UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract

UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Jui-Chien Huang of Hsinchu City (TW)

Shih-Cheng Chen of New Taipei City (TW)

Chih-Hao Wang of Hsinchu County (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Zhi-Chang Lin of Hsinchu County (TW)

Jung-Hung Chang of Hsinchu (TW)

Lo-Heng Chang of Hsinchu (TW)

Shi Ning Ju of Hsinchu City (TW)

Guan-Lin Chen of Hsinchu County (TW)

UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096895 titled 'UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES

Simplified Explanation

The semiconductor device described in the abstract consists of a substrate with a fin stack containing multiple nanostructures, each surrounded by a gate device and inner spacers. The width of the inner spacers varies across different layers of the fin stack.

• The semiconductor device includes a substrate and a fin stack with nanostructures.
• Each nanostructure is surrounded by a gate device and inner spacers.
• The width of the inner spacers differs between layers of the fin stack.

Potential Applications

This technology could be applied in:

• Advanced electronic devices
• High-performance computing systems
• Next-generation sensors

Problems Solved

This technology addresses:

• Enhanced performance and efficiency of semiconductor devices
• Improved control over nanostructures in the fin stack
• Reduction of power consumption in electronic devices

Benefits

The benefits of this technology include:

• Increased speed and reliability of electronic devices
• Enhanced functionality of semiconductor components
• Potential for smaller and more energy-efficient devices

Potential Commercial Applications

This technology could be utilized in:

• Semiconductor manufacturing industry
• Consumer electronics market
• Telecommunications sector

Possible Prior Art

One possible prior art related to this technology is the use of inner spacers in semiconductor devices to control the spacing between components.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

What are the specific manufacturing processes involved in creating the fin stack with varying widths of inner spacers?

The article does not delve into the detailed manufacturing processes required to implement the fin stack with different widths of inner spacers.

Original Abstract Submitted

according to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. a width of the inner spacers differs between different layers of the fin stack.