Taiwan semiconductor manufacturing co., ltd. (20240096882). NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract
Contents
NANOSTRUCTURE WITH VARIOUS WIDTHS
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hsiao-Han Liu of Miaoli County (TW)
Chih-Hao Wang of Baoshan Township (TW)
Kuo-Cheng Chiang of Zhubei City (TW)
Shi-Ning Ju of Hsinchu City (TW)
Kuan-Lun Cheng of Hsinchu City (TW)
NANOSTRUCTURE WITH VARIOUS WIDTHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096882 titled 'NANOSTRUCTURE WITH VARIOUS WIDTHS
Simplified Explanation
The semiconductor structure described in the patent application includes first and second nanostructures spaced apart in one direction, with source/drain features attached to opposite sides of the first nanostructures in a direction orthogonal to the first. The third nanostructures are wider than the first, and the first distance between the left-most points of the first and second nanostructures is smaller than the second distance between the left-most points of the third and fourth nanostructures.
- First nanostructures and second nanostructures spaced apart in one direction
- Source/drain features attached to opposite sides of the first nanostructures in a direction orthogonal to the first
- Third nanostructures wider than the first nanostructures
- First distance between left-most points of first and second nanostructures smaller than second distance between left-most points of third and fourth nanostructures
- Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as high-performance transistors and integrated circuits.
- Problems Solved
This technology addresses the need for improved semiconductor structures with enhanced performance and efficiency.
- Benefits
The benefits of this technology include increased functionality, higher speed, and improved reliability in semiconductor devices.
- Potential Commercial Applications
Potential commercial applications of this technology could include the production of faster and more efficient electronic devices for various industries, including telecommunications, computing, and consumer electronics.
- Possible Prior Art
One possible prior art for this technology could be the use of nanostructures in semiconductor devices to improve performance and efficiency.
- Unanswered Questions
- How does the size of the nanostructures impact the overall performance of the semiconductor structure?
The size of the nanostructures can affect the conductivity and electron mobility within the semiconductor structure, which in turn can influence the overall performance of the device.
- What materials are used in the fabrication of the nanostructures in this semiconductor structure?
The materials used in the fabrication of the nanostructures can determine their physical and electrical properties, which are crucial for the functionality of the semiconductor device.
Original Abstract Submitted
a semiconductor structures and a method for forming the same are provided. the semiconductor structure includes first nanostructures and second nanostructures spaced apart from the first nanostructures in a first direction. a left-most point of the first nanostructures and a left-most point of the second nanostructures has a first distance in the first direction. the semiconductor structure further includes first source/drain features attached to opposite sides of the first nanostructures in a second direction being orthogonal to the first direction and third nanostructures and fourth nanostructures spaced apart from the third nanostructures in the first direction. a left-most point of the third nanostructures and a left-most point of the fourth nanostructures has a second distance in the first direction. in addition, the third nanostructures are wider than the first nanostructures in the first direction, and the first distance is smaller than the second distance.
